- Tytuł:
- Development of 3C-SiC MOSFETs
- Autorzy:
-
Bakowski, M.
Schöner, A.
Ericsson, P.
Strömberg, H.
Nagasawa, H.
Masayuki, A. - Powiązania:
- https://bibliotekanauki.pl/articles/308791.pdf
- Data publikacji:
- 2007
- Wydawca:
- Instytut Łączności - Państwowy Instytut Badawczy
- Tematy:
-
vertical MOSFET
3C-SiC
channel mobility - Opis:
- The paper reviews the development of the 3C-SiC MOSFETs in a unique development project combining the material and device expertise of HAST (Hoya Advanced Semiconductor Technologies) and Acreo, respectively. The motivation for the development of the 3C-SiC MOSFETs and the summary of the results from the lateral and vertical devices with varying size from single cell to 3×3 mm2 large devices are reviewed. The vertical devices had hexagonal and square unit cell designs with 2 žm and 4 žm channel length. The p-body was aluminum implanted and the source was nitrogen or phosphorus implanted. Low temperature Ti/W contacts were evaluated.
- Źródło:
-
Journal of Telecommunications and Information Technology; 2007, 2; 49-56
1509-4553
1899-8852 - Pojawia się w:
- Journal of Telecommunications and Information Technology
- Dostawca treści:
- Biblioteka Nauki
Artykuł