- Tytuł:
- Compact Transverse Electric Silicon-on-Insulator Mode Converter for Mode-Division Multiplexer
- Autorzy:
-
Sharaf, Mohamed H.
El-Mashade, Mohamed B.
Emran, Ahmed A. - Powiązania:
- https://bibliotekanauki.pl/articles/2055263.pdf
- Data publikacji:
- 2022
- Wydawca:
- Polska Akademia Nauk. Czytelnia Czasopism PAN
- Tematy:
-
integrated optics
silicon-on-insulator waveguide
WDM & MDM systems
perturbation theory
integrated optical
devices
hybrid modes
guided waves - Opis:
- On-chip optical-interconnect technology emerges as an attractive approach due to its ultra-large bandwidth and ultra-low power consumption. Silicon-on-insulator (SOI) wire waveguides, on the other hand, have been identified to potentially replace copper wires for intra-chip communication. To take advantage of the wide bandwidth of SOI waveguides, wavelengthdivision multiplexing (WDM) has been implemented. However, WDM have inherent drawbacks. Mode-division multiplexing (MDM) is a viable alternative to WDM in MIMO photonic circuits on SOI as it requires only one carrier wavelength to operate. In this vein, mode converters are key components in on-chip MDM systems. The goal of this paper is to introduce a transverse electric mode converter. The suggested device can convert fundamental transverse electric modes to first-order transverse electric ones and vice versa. It is based on small material perturbation which introduces gradual coupling between different modes. This device is very simple and highly compact; the size of which is 3 μm². Mathematical expressions for both the insertion loss and crosstalk are derived and optimized for best performance. In addition, three-dimensional finite-difference time-domain (3D-FDTD) simulations are performed in order to verify the mathematical model of the device. Our numerical results reveal that the proposed device has an insertion loss of 1.2 dB and a crosstalk of 10.1 dB. The device’s insertion loss can be decreased to 0.95 dB by adding tapers to its material perturbation.
- Źródło:
-
International Journal of Electronics and Telecommunications; 2022, 68, 2; 275--280
2300-1933 - Pojawia się w:
- International Journal of Electronics and Telecommunications
- Dostawca treści:
- Biblioteka Nauki
Artykuł