- Tytuł:
- Nature of Donors in SiC
- Autorzy:
-
Suchanek, B.
Dwiliński, R.
Kamińska, M.
Palczewska, M.
Vlaskina, S. - Powiązania:
- https://bibliotekanauki.pl/articles/1872293.pdf
- Data publikacji:
- 1995-02
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
- 76.30.Da
- Opis:
- 6H-SiC samples were examined by ESR technique in temperature range from 5 K up to 300 K. Two kinds of ESR lines were observed: a single line at g = 2.0054 ± 0.0007, called X-line, and a triplet corresponding to isolated nitrogen defect. Ionization energy of X defect was determined as about 60 meV and the ionization energy of isolated nitrogen was determined as about 200 meV below SiC conduction band.
- Źródło:
-
Acta Physica Polonica A; 1995, 87, 2; 321-324
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł