- Tytuł:
- Pressure Induced Shallow-Deep A$\text{}_{1}$ Transition for Sn Donor in GaAs Observed in Diamond Anvil Cell Photoluminescence Experiment
- Autorzy:
-
Dmochowski, J. E.
Stradling, R. A.
Sly, J.
Dunstan, D. J.
Prins, A. D.
Adams, A. R. - Powiązania:
- https://bibliotekanauki.pl/articles/1876148.pdf
- Data publikacji:
- 1995-02
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
- 71.55.Eq
- Opis:
- Variable-pressure Dunstan-type diamond anvil high pressure cell and a low temperature photoluminescence technique are used to observe the shallow-deep A$\text{}_{1}$ transition for Sn donors in highly Sn doped n-type (≈ 10$\text{}^{18}$ cm$\text{}^{-3}$) GaAs. Fermi level pinning to the position of the deep Sn donor state entering the gap close to 30 kbar pressure is observed. Drastic narrowing of the near-band-edge luminescence is observed in the transition region. The deep-donor pressure coefficient of 2 meV/kbar with respect to the valence band is deduced from the energy position of the deep donor-acceptor transitions.
- Źródło:
-
Acta Physica Polonica A; 1995, 87, 2; 457-460
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł