Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

English (EN)·Polski (PL)·Yкраїнський (UK)
Przejdź do strony domowej biblioteki Centralna Biblioteka Wojskowa Link otwiera się w nowym oknie Logo biblioteki Prolib Integro - strona głównaCentralna Biblioteka Wojskowa

Wyszukujesz frazę "Domagała, B." wg kryterium: Autor

  Lista filtrów
Wyrównaj
    Wyświetlanie 1-9 z 9
    Tytuł:
    Grazing Incidence X-Ray Reflectivity Study of MBE-Grown Co/Cu Multilayers
    Autorzy:
    Pełka, J. B.
    Baczewski, L. T.
    Wawro, A.
    Domagała, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1963397.pdf
    Data publikacji:
    1997-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.30.Gw
    75.30.-m
    75.70.-i
    Opis:
    In this work we report preliminary grazing-incidence X-ray reflectometry studies of multilayer structures composed of 3d metals Co and Cu deposited in the ultra-high vacuum molecular beam epitaxy system. The multilayers of different modulation period were deposited on glass substrate directly, or on 3d -metallic buffers of various thicknesses. The experimental specular reflectivity spectra were analyzed by a comparison with a theoretical model calculated from a recursive algorithm based on the Fresnel formula [1, 2]. It enabled us to estimate the structural parameters concerning layer thickness and roughness. The results obtained are correlated with magnetization measurements of the layered structures, as a function of modulation period, buffer type and thickness. A special attention to influence of interfacial roughness on magnetization results is paid.
    Źródło:
    Acta Physica Polonica A; 1997, 91, 5; 859-863
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Study of Si(111) Implanted with As Ions by X-Ray Diffraction and Grazing Incidence Methods
    Autorzy:
    Pełka, J. B.
    Górecka, J.
    Auleytner, J.
    Domagała, J.
    Bąk-Misiuk, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1964119.pdf
    Data publikacji:
    1997-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.55.Ln
    68.55.Jk
    Opis:
    The Si(111) wafer cut from a bulk single crystal obtained by the Czochralski method was implanted with 5×10$\text{}^{16}$ I cm$\text{}^{-2}$ of As ions of energy 80 keV. The dose applied was chosen above the amorphization limit of the silicon substrate. Two samples, implanted and a reference, were studied by grazing incidence X-ray reflectometry and X-ray diffraction methods using a high resolution Philips MRD system equipped with a Cu source and a channel-cut monochromator. The obtained spectra were compared with distributions of ion range and defect production calculated with TRIM program [1], as well as with theoretical models of reflectivity [2, 3]. The results of grazing incidence X-ray reflectometry reflectivity of the implanted sample show well-pronounced oscillations, which can be associated with a layer about 50 nm thick, approximately comparable to the thickness of the defected layer estimated from the TRIM method. Theoretical calculations of reflectivity clearly indicate an occurrence of a Si layer of electron density lower about 10-15% comparing to the unimplanted Si sample. This can be due to the vacancy production during ion implantation. A comparison of the spectra with a density distribution profile concluded from the TRIM calculations shows large discrepancies. The results indicate the applicability of grazing incidence X-ray reflectometry method in a study of amorphization processes in implanted layers.
    Źródło:
    Acta Physica Polonica A; 1997, 91, 5; 905-910
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Oscillations in Reflectivity of Samples with X-ray Waveguide Layers
    Autorzy:
    Pełka, J. B.
    Lagomarsino, S.
    Di Fonzo, S.
    Jark, W.
    Domagała, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1945221.pdf
    Data publikacji:
    1996-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.65.+g
    78.20.Ci
    Opis:
    The glancing-angle reflectivity profiles in samples containing an X-ray waveguide layer are studied. Oscillations observed at angles within the region of resonance and above, are interpreted by angle dependent interference of the monochromatic X-ray beam in thin layer. The discussion is extended to the structures composed of more than one layer. Experimental reflectivity spectra recorded with Cu K$\text{}_{α}$ radiation are compared with the theoretical calculations. It leads to the model of oscillations in reflectivity consistent both for the resonant and non-resonant regions, and clarifies interpretation of oscillations in the region above the resonances. A brief discussion of potential applications of the reflectivity spectra to the studies of structure of thin layers is done.
    Źródło:
    Acta Physica Polonica A; 1996, 89, 3; 323-328
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Changes of GaP: N Defect Structure under Hydrostatic Pressure
    Autorzy:
    Bąk-Misiuk, J.
    Domagała, J.
    Kozankiewicz, B.
    Misiuk, A.
    Adamczewska, J.
    Skibska, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1924323.pdf
    Data publikacji:
    1993-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    65.70.+y
    Opis:
    The changes of defect structure of GaP:N epitaxial layers subjected to hydrostatic pressures up to 1.8 GPa are investigated by X-ray diffraction and photoluminescence. The observed changes are more pronounced at higher pressures and depend on the nitrogen concentration, c$\text{}_{N}$, and on initial defect structure. Especially complex hydrostatic pressure induced properties are observed for the sample with c$\text{}_{N}$ > 10$\text{}^{20}$ at. cm$\text{}^{-3}$. The model explaining the hydrostatic pressure induced defect structure changes is proposed.
    Źródło:
    Acta Physica Polonica A; 1993, 83, 1; 87-93
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Defect Structure of Pressure Treated Czochralski Grown Silicon Investigated by X-Ray Topography and Diffractometry
    Autorzy:
    Misiuk, A.
    Härtwig, J.
    Prieur, E.
    Ohler, M.
    Bąk-Misiuk, J.
    Domagała, J.
    Surma, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1964154.pdf
    Data publikacji:
    1997-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.Yx
    81.40.Vw
    61.10.-i
    Opis:
    The defect structure of Czochralski grown silicon single crystals annealed at 870-1400 K under hydrostatic pressure up to 1 GPa was investigated by conventional and synchrotron radiation X-ray topography and by reciprocal space mapping. Hydrostatic pressure promotes oxygen precipitation from oversaturated Si-O solid solution and the creation of structural defects.
    Źródło:
    Acta Physica Polonica A; 1997, 91, 5; 987-991
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Properties of Fe Doped β-HgS under Hydrostatic Pressure
    Autorzy:
    Szuszkiewicz, W.
    Skierbiszewski, C.
    Paszkowicz, W.
    Dybko, K.
    Domagała, J.
    Dynowska, E.
    Witkowska, B.
    Zinn, P.
    Powiązania:
    https://bibliotekanauki.pl/articles/1992279.pdf
    Data publikacji:
    1998-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.10.Gs
    64.60.My
    71.55.Gs
    Opis:
    High pressure- high temperature studies of the structural (zinc blende- cinnabar) phase transitions were performed in Hg$\text{}_{1-x}$Fe$\text{}_{x}$ S mixed crystals (x<0.1) using synchrotron radiation and multianvil X-ray diffraction press. Pressure investigations of the Hall effect and conductivity of crystals containing up to a few percent of Fe were also performed at 295 K and 77 K. It was demonstrated that Fe in β-HgS creates deep, localized donor state resonant with the conduction band.
    Źródło:
    Acta Physica Polonica A; 1998, 94, 3; 570-574
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    PVT-Grown Single Crystals of Cd$\text{}_{1-x}$Zn$\text{}_{x}$Te (x ≤ 0.25) and ZnTe as Substrates for Epitaxy
    Autorzy:
    Mycielski, A.
    Szadkowski, A.
    Łusakowska, E.
    Kowalczyk, L.
    Domagała, J.
    Bąk-Misiuk, J.
    Wilamowski, Z.
    Witkowska, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1991957.pdf
    Data publikacji:
    1998-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.05.Dz
    81.10.Bk
    Opis:
    The process of growth of single crystals of Cd$\text{}_{1-x}$Zn$\text{}_{x}$Te (x ≤ 0.25) and ZnTe by physical vapour transport has been optimized and the twin-free single crystals with a very good crystal structure and low density of dislocations are grown as substrates for MBE and other techniques of epitaxy. Characterization of the crystals is described.
    Źródło:
    Acta Physica Polonica A; 1998, 94, 3; 441-445
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    ZnO by ALD - Advantages of the Material Grown at Low Temperature
    Autorzy:
    Guziewicz, E.
    Godlewski, M.
    Krajewski, T.
    Wachnicki, Ł.
    Łuka, G.
    Paszkowicz, W.
    Domagała, J.
    Przeździecka, E.
    Łusakowska, E.
    Witkowski, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1791286.pdf
    Data publikacji:
    2009-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.61.Ga
    78.66.Hf
    72.80.Ey
    Opis:
    The 3D-architecture is a prospective way in miniaturization of electronic devices. However, this approach can be realized only if metal paths are placed not only at the top, but also beneath the electronic parts, which imposes drastic temperature limitations for the electronic device processing. Therefore last years a lot of investigations are focused on materials which can be grown at low temperature with electrical parameters appropriate for electronic applications. Zinc oxide grown by the atomic layer deposition method is one of the materials of choice. We obtained ZnO-ALD films at growth temperature range between 100°C and 200°C, and with controllable electrical parameters. Free carrier concentration was found to scale with deposition temperature, so it is possible to grow ZnO films with desired conductivity without any intentional doping. We used correlation of electrical and optical parameters to optimize the deposition process. Zinc oxide layers obtained in that way have free carrier concentration as low as $10^{16} cm^{-3}$ and high mobility ($10-50 cm^{2}$/(Vs)), which satisfies requirements for a material used in three-dimensional memories.
    Źródło:
    Acta Physica Polonica A; 2009, 116, 5; 814-817
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Epitaxial Growth and Optical Properties of PbTe/CdTe Semiconductor Heterostructures
    Autorzy:
    Szot, M.
    Kowalczyk, L.
    Smajek, E.
    Domukhovski, V.
    Domagała, J.
    Łusakowska, E.
    Taliashvili, B.
    Dziawa, P.
    Knoff, W.
    Wiater, M.
    Wojtowicz, T.
    Story, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/1811996.pdf
    Data publikacji:
    2008-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Hx
    78.67.De
    78.67.Hc
    78.67.Pt
    Opis:
    Growth optimization, optical and structural properties of PbTe/CdTe multilayers grown by molecular beam epitaxy on GaAs (001) as well as on $BaF_2$ (111) substrates is reported. An intense photoluminescence in the mid-infrared region is observed from PbTe quantum wells excited with 1.17 eV pulsed YAG:Nd laser. The energy of the emission peak shows blue shift with decreasing PbTe well width and has a positive temperature coefficient. The influence of thermal annealing on photoluminescence spectra of PbTe/CdTe multilayers grown on $BaF_2$ substrate is discussed.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 5; 1391-1396
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-9 z 9

      Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies