- Tytuł:
- On Subband Mobilities Observed in δ-doped AlGaAs/GaAs Quantum Wells and GaAs Layers
- Autorzy:
-
Dobaczewski, L.
Maude, D. K.
Missous, M.
Portal, J. C. - Powiązania:
- https://bibliotekanauki.pl/articles/1931958.pdf
- Data publikacji:
- 1995-01
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
71.25.Hc
71.55.Eq
73.20.Dx - Opis:
- Electronic transport phenomena in molecular beam epitaxy grown silicon δ-doped AlGaAs/GaAs quantum wells and GaAs layers were investigated. Observations of the Shubnikov-de Haas oscillations allowed to deduce the redistribution of electrons among energy subbands formed by V-shaped and rectangular wells for GaAs layers and the AlGaAs/GaAs quantum wells, respectively. In both cases the effects of illumination upon individual sub-band mobilities and carrier concentrations were studied and the manifestation of the DX centres was demonstrated.
- Źródło:
-
Acta Physica Polonica A; 1995, 87, 1; 201-204
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł