- Tytuł:
- Deep Electron Traps in CdTe:In Films Grown by Molecular Beam Epitaxy
- Autorzy:
-
Żakrzewski, A. K.
Dobaczewski, L.
Karczewski, G.
Wojtowicz, T.
Kossut, J. - Powiązania:
- https://bibliotekanauki.pl/articles/1934051.pdf
- Data publikacji:
- 1995-11
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
68.55.Ln
73.61.Ga - Opis:
- N-type indium doped CdTe grown on n$\text{}^{+}$-GaAs by molecular beam epitaxy has been studied by the standard deep level transient spectroscopy and the isothermal Laplace-transform deep level transient spectroscopy. It was found that the Cd/Te flux ratio strongly influences the deep level transient spectroscopy results. The unusual temperature dependence of the electron emission rate in films grown at nearly stoichiometric conditions may point out that the observed defect is resonant with the conduction band.
- Źródło:
-
Acta Physica Polonica A; 1995, 88, 5; 961-964
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł