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    Wyświetlanie 1-3 z 3
    Tytuł:
    Double Step Sintering Behavior Of 316L Nanoparticle Dispersed Micro-Sphere Powder
    Dwuetapowe spiekanie mikrosferycznych nanocząstek proszku 316L
    Autorzy:
    Jeon, B.
    Sohn, S. H.
    Lee, W.
    Han, C.
    Kim, Y. D.
    Choi, H.
    Powiązania:
    https://bibliotekanauki.pl/articles/355221.pdf
    Data publikacji:
    2015
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    316L stainless steel
    nanoparticle dispersed micro-sphere
    pulse wire explosion
    sintering
    stal nierdzewna 316L
    spiekanie dwuetapowe
    mikrosferyczne nanocząstki
    Opis:
    316L stainless steel is a well-established engineering material and lots of components are fabricated by either ingot metallurgy or powder metallurgy. From the viewpoints of material properties and process versatility, powder metallurgy has been widely applied in industries. Generally, stainless steel powders are prepared by atomization processes and powder characteristics, compaction ability, and sinterability are quite different according to the powder preparation process. In the present study, a nanoparticle dispersed micro-sphere powder is synthesized by pulse wire explosion of 316L stainless steel wire in order to facilitate compaction ability and sintering ability. Nanoparticles which are deposited on the surface of micro-powder are advantageous for a rigid die compaction while spherical micro-powder is not to be compacted. Additionally, double step sintering behavior is observed for the powder in the dilatometry of cylindrical compact body. Earlier shrinkage peak comes from the sintering of nanoparticle and later one results from the micro-powder sintering. Microstructure as well as phase composition of the sintered body is investigated.
    Źródło:
    Archives of Metallurgy and Materials; 2015, 60, 2B; 1155-1158
    1733-3490
    Pojawia się w:
    Archives of Metallurgy and Materials
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Influence of InAs Coverage on Transition of Size Distribution and Optical Properties of InAs Quantum Dots
    Autorzy:
    Kim, G.
    Jeon, S.
    Cho, M.
    Choi, H.
    Kim, D.
    Kim, M.
    Kwon, Y.
    Choe, J.
    Kim, J.
    Leem, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1535820.pdf
    Data publikacji:
    2010-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.15.Hi
    68.37.Ps
    78.55.Cr
    78.67.Hc
    Opis:
    The influence of InAs coverage on the formation of self-assembled quantum dots grown by molecular-beam epitaxy was investigated by atomic force microscopy and photoluminescence measurements. As the InAs coverage increased from 2.0 to 3.0 monolayers, the quantum dot density decreased from 1.1 × $10^{11}$ to 1.36 × $10^{10} cm^{-2}$. This result could be attributed to the coalescence of neighboring small InAs quantum dots resulting in the formation of much larger InAs quantum dots with lower quantum dot density. Atomic force microscopy results revealed that as the InAs quantum dot coverage increased, the transition of size distribution of InAs quantum dots from single-modal to multimodal occurred. The temperature-dependent photoluminescence spectra showed that the photoluminescence spectra red shifted and the photoluminescence peak intensity decreased as the InAs coverage increased. The thermal activation energy was strongly dependent on the InAs coverage, and for InAs quantum dots with 3.0 ML thick InAs coverage, this energy was estimated to be 147 meV.
    Źródło:
    Acta Physica Polonica A; 2010, 118, 4; 673-676
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Fabrication and Characterization of GaN/Polymer Composite p-n Junction with PEDOT Nanoparticle Interface Layer
    Autorzy:
    Kim, M.
    Jin, S.
    Choi, H.
    Kim, G.
    Yim, K.
    Kim, S.
    Nam, G.
    Yoon, H.
    Kim, Y.
    Lee, D.
    Kim, Jin
    Kim, Jong
    Leem, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1505152.pdf
    Data publikacji:
    2011-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.61.Ey
    81.15.Gh
    Opis:
    A heavily Si-doped GaN/polymer hybrid structure with p-type poly(3,4-ethylene-dioxythiophene):beta-1,3-glucan (PEDOT nanoparticle) interface layer has been fabricated. The Si-doped GaN thin film with carrier concentration of 1 × $10^{19} cm^{-3}$ was grown by metal-organic chemical vapor deposition. The PEDOT nanoparticle with various sizes ranging from 60 to 120 nm was synthesized via a miniemulsion polymerization process. The electrical conductivity of the PEDOT nanoparticle is less than 1.2 S/cm. The current-voltage (I-V) characteristic of the hybrid structure shows diode-like behavior. The I-V characteristic was examined in the framework of the thermionic emission model. The ideality factor of the structure without PEDOT nanoparticle interface layer is 12.9. However, the ideality factor of the hybrid structure with PEDOT nanoparticle interface layer is obtained as 1.9. The value of ideality factor is dramatically decreased by inserting the PEDOT nanoparticle interface layer.
    Źródło:
    Acta Physica Polonica A; 2011, 119, 6; 875-879
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-3 z 3

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