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Wyszukujesz frazę "Chen, R." wg kryterium: Autor


Wyświetlanie 1-3 z 3
Tytuł:
Characterization of Phyllosticta hostae causing Phyllosticta leaf spot on spider lily in China
Autorzy:
Yi, R.H.
Gan, L.J.
Chen, J.
Xu, X.L.
Powiązania:
https://bibliotekanauki.pl/articles/66837.pdf
Data publikacji:
2015
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
Phyllosticta hostae
leaf spot
plant disease
spider lily
Hymenocallis littoralis
tropical plant
herb
China
Opis:
Leaf spot disease on the spider lily [Hymenocallis littoralis (Jacq.) Salisb.] continues to cause serious problems in China. To confirm the pathogen, the pathogenicity of isolates from diseased leaves was tested according to Koch’s postulates. The isolates were tentatively identified using morphological characteristics and confirmation was done by phylogenetic analysis of the translation elongation factor 1-alpha gene (TEF1), the actin gene (ACT), and internal transcibed spacer (ITS) sequences using neighbor-joining (NJ), maximum parsimony (MP), and Bayesian inference (BI) methods. The pathogen was identified as Phyllosticta hostae. Molecular analysis indicated very little diversity in the TEF1, ACT, and ITS gene. This is the first report of P. hostae causing leaf spot disease on spider lily in China.
Źródło:
Journal of Plant Protection Research; 2015, 55, 4
1427-4345
Pojawia się w:
Journal of Plant Protection Research
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Dislocation Generation and Propagation across the Seed in Seed Cast-Si Ingots
Autorzy:
Miyamura, Y.
Chen, J.
Prakash, R.
Jiptner, K.
Harada, H.
Sekiguchi, T.
Powiązania:
https://bibliotekanauki.pl/articles/1363535.pdf
Data publikacji:
2014-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
88.40.jj
81.10.Fq
61.72.Ff
61.72.Hh
61.72.Lk
Opis:
We have studied the dislocation generation and propagation from the seed crystals during seed cast Si growth. The grown ingot was cut into a vertical wafer, followed by the dislocation imaging using X-ray topography and Secco etching. The dislocation behavior at the seed area was compared with the dislocation generation at the top surface due to the thermal stress during cooling. The dislocations at the seed/crystal interface have propagated on the {111} plane toward top. When the seed surface was not melted sufficiently, the interface defect density became high, but no clear dislocation propagation was recognized. This suggests that the thermal shock at the seed/melt interface was not high enough to propagate dislocations to the growth direction. A certain amount of dislocations has been introduced from the top into the ingot according to the thermal stress. These observations suggest that optimizing the initial growth condition is important to dislocation control.
Źródło:
Acta Physica Polonica A; 2014, 125, 4; 1024-1026
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-3 z 3

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