- Tytuł:
- Effect of Hydrogen on the Electronic Properties of GaAs$\text{}_{1-y}$N$\text{}_{y}$ Heterostructures
- Autorzy:
-
Bissiri, M.
Gaspari, V.
Baldassarri H. v. H., G.
Ranalli, F.
Polimeni, A.
Capizzi, M.
Nucara, A.
Geddo, M.
Fischer, M.
Reinhardt, M.
Forchel, A. - Powiązania:
- https://bibliotekanauki.pl/articles/2028796.pdf
- Data publikacji:
- 2001-09
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
78.66.Fd
71.55.Eq
78.55.Cr - Opis:
- We have performed photoluminescence measurements in order to study the optical properties of hydrogenated GaAs$\text{}_{1-y}$N$\text{}_{y}$/GaAs heterostructures for y ranging from 0 to 0.03. Hydrogen irradiation leads to: (i) a progressive passivation of N-related recombination lines for low N content (y≈ 0.001); (ii) a sizable blue shift of the band gap in the "alloy" limit (y≈0.01). Thermal annealing restores the optical properties samples had before hydrogenation. These results can be accounted for by the formation of N$\text{}^{-}$ -H$\text{}^{+}$ complexes and demonstrate that hydrogen irradiation provides a powerful tool for the analysis of photoluminescence spectra of GaAs$\text{}_{1-y}$N$\text{}_{y}$.
- Źródło:
-
Acta Physica Polonica A; 2001, 100, 3; 365-371
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł