- Tytuł:
- Simulation of Carbon Ions Interactions with Monocrystalline Silicon Targets
- Autorzy:
-
Bouguerra, A.
Labbani, R. - Powiązania:
- https://bibliotekanauki.pl/articles/1402536.pdf
- Data publikacji:
- 2015-08
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
78.20.Bh
85.40.Ry - Opis:
- In this work, several phenomena related to carbon ion implantation into Si(100) targets were simulated. The investigation was performed using Crystal-TRIM code (crystal-transport and range of ions in matter) under different conditions. In particular, we simulated the carbon profiles with respect to: (i) ions beam (energy, dose, orientation); (ii) substrate (temperature, crystallographic orientation). Two particular cases were taken into account: (i) implantation of 80 keV C⁺ to a fluence of 2.7× 10¹⁷ ion/cm² at room temperature; (ii) implantation of 40 keV C⁺ to a fluence of 6.5× 10¹⁷ ion/cm² at substrate temperature of 400°C. For both cases, we used a tilt angle of 7°. Several results were obtained and compared with the Rutherford backscattering spectroscopy and elastic recoil detection analysis results provided by literature.
- Źródło:
-
Acta Physica Polonica A; 2015, 128, 2B; B-67-B-70
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł