- Tytuł:
- THz Double-Grating Gate Transistor Detectors in High Magnetic Fields
- Autorzy:
-
But, D.
Dyakonova, N.
Coquillat, D.
Teppe, F.
Knap, W.
Watanabe, T.
Tanimoto, Y.
Boubanga Tombet, S.
Otsuji, T. - Powiązania:
- https://bibliotekanauki.pl/articles/1409591.pdf
- Data publikacji:
- 2012-12
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
07.57.Kp
85.30.Tv
73.43.Qt - Opis:
- Double-grating-gate field-effect transistors have a great potential as terahertz detectors. This is because the double grating gate serves not only for carrier density tuning but also as an efficient THz radiation coupler. In this paper, we present characterization of these transistors using high magnetic fields. Low and high magnetic field data are used to determine the electron mobility and electron concentration, respectively, in different parts of the transistor channel.
- Źródło:
-
Acta Physica Polonica A; 2012, 122, 6; 1080-1082
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł