- Tytuł:
- Stokes Shift and Band Gap Bowing in $In_xGa_{1-x}N$ (0.060 ≤ x ≤ 0.105) Grown by Metalorganic Vapour Phase Epitaxy
- Autorzy:
-
Yildiz, A.
Dagdelen, F.
Aydogdu, Y.
Acar, S.
Lisesivdin, S.
Kasap, M.
Bosi, M. - Powiązania:
- https://bibliotekanauki.pl/articles/1813499.pdf
- Data publikacji:
- 2008-02
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
73.61.-r
78.20.-e
78.40.Fy
78.55.-m - Opis:
- We presented the results of electrical and optical studies of the properties of $In_xGa_{1-x}N$ epitaxial layers (0.060≤x≤0.105) grown by metalorganic vapour phase epitaxy. Resistivity and Hall effect measurements of the samples were carried out at room temperature. Optical properties of the samples were characterized by photoluminescence and optical absorption spectroscopy. The comparison between the photoluminescence and the optical absorption measurements gives the Stokes shift. We explained the observed Stokes shift in terms of Burstein-Moss effect. The band gap versus composition plot for $In_xGa_{1-x}N$ alloys is well fitted with a bowing parameter of≈3.6 eV.
- Źródło:
-
Acta Physica Polonica A; 2008, 113, 2; 731-739
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł