Autor: Wróbel, Paweł - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Multi-technique characterisation of InAs-on-GaAs wafers with circular defect pattern
Autorzy:: Boguski, Jacek
Wróbel, Jarosław
Złotnik, Sebastian
Budner, Bogusław
Liszewska, Malwina
Kubiszyn, Łukasz
Michałowski, Paweł P.
Ciura, Łukasz
Moszczyński, Paweł
Odrzywolski, Sebastian
Jankiewicz, Bartłomiej
Wróbel, Jerzy
Powiązania:: https://bibliotekanauki.pl/articles/2204219.pdf
Data publikacji:: 2023
Wydawca:: Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:: wafer homogeneity
wafer defect pattern
surface roughness
indium arsenide
beryllium doping
Opis:: The article presents the results of diameter mapping for circular-symmetric disturbance of homogeneity of epitaxially grown InAs (100) layers on GaAs substrates. The set of acceptors (beryllium) doped InAs epilayers was studied in order to evaluate the impact of Be doping on the 2-inch InAs-on-GaAs wafers quality. During the initial identification of size and shape of the circular pattern, non-destructive optical techniques were used, showing a 100% difference in average roughness between the wafer centre and its outer part. On the other hand, no volumetric (bulk) differences are detectable using Raman spectroscopy and highresolution X-ray diffraction. The correlation between Be doping level and circular defect pattern surface area has been found.
Źródło:: Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144564
1230-3402
Pojawia się w:: Opto-Electronics Review
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: InAs light-to-heavy hole effective mass ratio determined experimentally from mobility spectrum analysis
Autorzy:: Wróbel, Jarosław
Umana-Membreno, Gilberto A.
Boguski, Jacek
Złotnik, Sebastian
Kowalewski, Andrzej
Moszczyński, Paweł
Antoszewski, Jarek
Faraone, Lorenzo
Wróbel, Jerzy
Powiązania:: https://bibliotekanauki.pl/articles/2204210.pdf
Data publikacji:: 2023
Wydawca:: Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:: indium arsenide
effective masses
energy band warping
magnetotransport
mobility spectrum analysis
Opis:: Careful selection of the physical model of the material for a specific doping and selected operating temperatures is a non-trivial task. In numerical simulations that optimize practical devices such as detectors or lasers architecture, this challenge can be very difficult. However, even for such a well-known material as a 5 μm thick layer of indium arsenide on a semiinsulating gallium arsenide substrate, choosing a realistic set of band structure parameters for valence bands is remarkable. Here, the authors test the applicability range of various models of the valence band geometry, using a series of InAs samples with varying levels of p-type doping. Carefully prepared and pretested the van der Pauw geometry samples have been used for magneto-transport data acquisition in the 20-300 K temperature range and magnetic fields up to ±15 T, combined with a mobility spectra analysis. It was shown that in a degenerate statistic regime, temperature trends of mobility for heavy- and light-holes are uncorrelated. It has also been shown that parameters of the valence band effective masses with warping effect inclusion should be used for selected acceptor dopant levels and range of temperatures.
Źródło:: Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144567
1230-3402
Pojawia się w:: Opto-Electronics Review
Dostawca treści:: Biblioteka Nauki

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