- Tytuł:
- Implanted manganese redistribution in Si after He+ irradiation and hydrogen pulse plasma treatment
- Autorzy:
-
Werner, Z.
Pochrybniak, C.
Barlak, M.
Piekoszewski, J.
Korman, A.
Heller, R.
Szymczyk, W.
Bocheńska, K. - Powiązania:
- https://bibliotekanauki.pl/articles/147018.pdf
- Data publikacji:
- 2011
- Wydawca:
- Instytut Chemii i Techniki Jądrowej
- Tematy:
-
dilute magnetic semiconductors (DMS)
Mn-implanted Si
ion beam induced epitaxial crystallization - Opis:
- Si-Mn alloy with a Mn content of a few percent is potentially a candidate for room temperature (RT) dilute magnetic semiconductor (DMS). However, the present methods of material manufacture suffer from problems with poor Mn solubility and thermodynamical limitations. We study a non-equilibrium method in which silicon is first implanted with 160 keV manganese ions to a dose of 1 × 1016 ions/cm2 and next either irradiated with 1.5 MeV 4He+ ions from the Warsaw Van de Graaff accelerator at 400°C or treated with high-energy hydrogen plasma pulses. Conclusion from Rutherford backscattering spectrometry (RBS) examination of the samples is that both approaches lead to recovery of crystalline surface layer with manganese occupying off-substitutional sites. The potential development of the method is discussed.
- Źródło:
-
Nukleonika; 2011, 56, 1; 5-8
0029-5922
1508-5791 - Pojawia się w:
- Nukleonika
- Dostawca treści:
- Biblioteka Nauki
Artykuł