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Wyszukujesz frazę "Bocheńska, K." wg kryterium: Autor


Wyświetlanie 1-2 z 2
Tytuł:
Structure and Composition of Scales Formed on AISI 316 L Steel Alloyed with Ce/La Using High Intensity Plasma Pulses after Oxidation in 1000°C
Autorzy:
Sartowska, B.
Piekoszewski, J.
Waliś, L.
Barlak, M.
Starosta, W.
Pochrybniak, C.
Bocheńska, K.
Powiązania:
https://bibliotekanauki.pl/articles/1503944.pdf
Data publikacji:
2011-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
52.77.-j
72.15.Eb
81.65.Mq
Opis:
It is well documented that the high oxygen affinity elements such as Y, Ce, La, Er and other rare earth elements added to steel in small amounts can improve their high temperature oxidation resistance. Rare earth elements can be either alloyed during the steel making process or introduced through surface treatment techniques. Improvement of high temperature oxidation resistance of AISI 316 L steel by incorporation Ce and La elements into its near surface region using high intensity pulsed plasma beams in so-called deposition by the pulse erosion mode was investigated in the present work. The samples were irradiated with 3 short (μs scale) intense (energy density $3 J//cm^2$) plasma pulses. Heating and cooling processes occur under non-equilibrium conditions. In all samples the near surface layer of the thickness in μm range was melted and simultaneously doped with cerium and lanthanum. The modified samples were oxidized at 1000°C for 100 h in air. The obtained effects were: oxide scales formed on the treated samples were more fine-grained, compact and adhering better that those formed on the un-treated samples.
Źródło:
Acta Physica Polonica A; 2011, 120, 1; 83-86
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Implanted manganese redistribution in Si after He+ irradiation and hydrogen pulse plasma treatment
Autorzy:
Werner, Z.
Pochrybniak, C.
Barlak, M.
Piekoszewski, J.
Korman, A.
Heller, R.
Szymczyk, W.
Bocheńska, K.
Powiązania:
https://bibliotekanauki.pl/articles/147018.pdf
Data publikacji:
2011
Wydawca:
Instytut Chemii i Techniki Jądrowej
Tematy:
dilute magnetic semiconductors (DMS)
Mn-implanted Si
ion beam induced epitaxial crystallization
Opis:
Si-Mn alloy with a Mn content of a few percent is potentially a candidate for room temperature (RT) dilute magnetic semiconductor (DMS). However, the present methods of material manufacture suffer from problems with poor Mn solubility and thermodynamical limitations. We study a non-equilibrium method in which silicon is first implanted with 160 keV manganese ions to a dose of 1 × 1016 ions/cm2 and next either irradiated with 1.5 MeV 4He+ ions from the Warsaw Van de Graaff accelerator at 400°C or treated with high-energy hydrogen plasma pulses. Conclusion from Rutherford backscattering spectrometry (RBS) examination of the samples is that both approaches lead to recovery of crystalline surface layer with manganese occupying off-substitutional sites. The potential development of the method is discussed.
Źródło:
Nukleonika; 2011, 56, 1; 5-8
0029-5922
1508-5791
Pojawia się w:
Nukleonika
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-2 z 2

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