Autor: Porowski, A. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Measurement of Very Small Zeeman Splittings in GaN:Mn,Mg by Faraday Rotation
Autorzy:: Wołoś, A.
Kossacki, P.
Golnik, A.
Kamińska, M.
Gaj, J. A.
Twardowski, A.
Grzegory, I.
Boćkowski, M.
Porowski, S.
Powiązania:: https://bibliotekanauki.pl/articles/2035615.pdf
Data publikacji:: 2002
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.20.Ls
71.70.Ej
71.55.Eq
71.20.Nr
Opis:: In this work we demonstrate an application of Faraday rotation for measuring an extremely small Zeeman splitting of an Mn related absorption line placed at 1.417 eV in optical absorption spectrum of Mn and Mg doped gallium nitride. Analysis of the collected spectra allowed us to determine the value of the splitting as equal to 0.12±0.01 meV at 6 T. This data should help in establishing the nature of the observed absorption band.
Źródło:: Acta Physica Polonica A; 2002, 102, 4-5; 695-699
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Mn Impurity in GaN Studied by Electron Paramagnetic Resonance
Autorzy:: Wołoś, A.
Palczewska, M.
Wilamowski, Z.
Kamińska, M.
Twardowski, A.
Boćkowski, M.
Grzegory, I.
Porowski, S.
Powiązania:: https://bibliotekanauki.pl/articles/2036027.pdf
Data publikacji:: 2003-06
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.55.-i
71.55.Eq
71.70.Gm
Opis:: We present the results of electron paramagnetic resonance investigations of GaN bulk crystals doped with Mn. The EPR experiment shows the Mn$\text{}^{2+}$ resonance in all the investigated n-type crystals, while in highly resistive samples extra doped with Mg acceptor the Mn$\text{}^{2+}$ resonance decreases. This is a consequence of the location of Mn acceptor level in GaN band gap. The analysis of the spin relaxation times reveals the Korringa scattering as the dominating spin relaxation mechanism in n-type GaN:Mn crystals. The effective exchange constant determined from spin relaxation rate temperature dependence is of the order of 14 meV.
Źródło:: Acta Physica Polonica A; 2003, 103, 6; 595-600
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Observation of Magnetic Anisotropy in Bulk GaMnN:Mg Crystals
Autorzy:: Gosk, J.
Zając, M.
Kamińska, M.
Twardowski, A.
Grzegory, I.
Boćkowski, M.
Porowski, S.
Powiązania:: https://bibliotekanauki.pl/articles/2036861.pdf
Data publikacji:: 2003-06
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.55.Eq
75.30.Gw
75.50.Pp
Opis:: Magnetic properties of bulk wurtzite n-type GaMnN and highly resistive GaMnN:Mg monocrystals were studied for the magnetic field applied parallel and perpendicular to the crystal hexagonal c-axis. Magnetization of both types of samples reveals paramagnetic behavior. However, for n-type GaMnN isotropic magnetization was observed which is in agreement with Mn d$\text{}^{5}$ configuration. On the other hand, GaMnN co-doped with Mg shows large magnetic anisotropy which suggests Mn to be in nonspherical d$\text{}^{4}$ or d$\text{}^{3}$ configuration.
Źródło:: Acta Physica Polonica A; 2003, 103, 6; 665-669
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Coupling of LO Phonons to Excitons in GaN
Autorzy:: Wysmołek, A.
Łomiak, P.
Baranowski, J. M.
Pakuła, K.
Stępniewski, R.
Korona, K. P.
Grzegory, I.
Boćkowski, M.
Porowski, S.
Powiązania:: https://bibliotekanauki.pl/articles/1952430.pdf
Data publikacji:: 1996-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.55.Cr
63.20.Mt
71.55.Eq
Opis:: The photoluminescence of homoepitaxial and heteroepitaxial GaN layers is reported. It is shown that the coupling between LO phonons and neutral acceptor bound excitons is much stronger than the coupling between LO phonons and neutral donor bound excitons. In undoped homoepitaxial layer, in spite of that the no-phonon emission due to donor bound excitons is one order of magnitude stronger than the acceptor bound excitons emission, the predominant structure in the LO phonon replica of the excitonic spectrum is related to optical transitions involving acceptor bound excitons. Temperature studies showed that at higher temperature the LO phonon replica is related to free excitons.
Źródło:: Acta Physica Polonica A; 1996, 90, 5; 981-984
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 5.

Tytuł:: Thermal Expansion of GaN Bulk Crystals and Homoepitaxial Layers
Autorzy:: Leszczyński, M.
Teisseyre, H.
Suski, T.
Grzegory, I.
Boćkowski, M.
Jun, J.
Pałosz, B.
Porowski, S.
Pakuła, K.
Baranowski, J. M.
Barski, A.
Powiązania:: https://bibliotekanauki.pl/articles/1952040.pdf
Data publikacji:: 1996-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.72.Ji
61.72.Vv
Opis:: Thermal expansion of gallium nitride was measured using high resolution X-ray diffraction. The following samples were examined: (i) single monocrystals grown at pressure of about 15 kbar, (ii) homoepitaxial layers. The main factor influencing both, the lattice parameters and the thermal expansion coefficient, are free electrons related to the nitrogen vacancies. The origin of an increase in the lattice constants by free electrons is discussed in terms of the deformation potential of the conduction-band minimum. An increase of the thermal expansion by free electrons is explained by a decrease of elastic constants.
Źródło:: Acta Physica Polonica A; 1996, 90, 5; 887-890
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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