- Tytuł:
- Fabrication and properties of the field emission array with self-alignment gate electrode
- Autorzy:
-
Barth, W.
Dębski, T.
Rangelow, I.W.
Grabiec, P.
Studzińska, K.
Zaborowski, M.
Mitura, S.
Biehl, S.
Hudek, P.
Kostic, I. - Powiązania:
- https://bibliotekanauki.pl/articles/308414.pdf
- Data publikacji:
- 2001
- Wydawca:
- Instytut Łączności - Państwowy Instytut Badawczy
- Tematy:
-
field-emission array
field emission display
diamond-like-carbon layers emission
silicon micromachining
self-alignment technology - Opis:
- A new method for the fabrication of field emission arrays (FEA) based on bulk/surface silicon micromachining and diamond-like-carbon (DLC) coating was developed. A matrix of self-aligned electron field emitters is formed in silicon by mean anisotropic etching in alkali solution of the front silicon film through micro holes opened in silicon oxide layer. The field emission of the fabricated emitter tips is enhanced by a diamond-like-carbon film formed by chemical vapor deposition on the microtips. Back side contacts are formed by metal patterning. Detailed Raman, Auger and TEM investigations of the deposited DLC films (nanocrystalline diamond smaller than 10 nm) will be presented. In this paper we discuss the problems related to the development of field emission arrays technology. We also demonstrate examples of devices fabricated according to those technologies.
- Źródło:
-
Journal of Telecommunications and Information Technology; 2001, 1; 49-52
1509-4553
1899-8852 - Pojawia się w:
- Journal of Telecommunications and Information Technology
- Dostawca treści:
- Biblioteka Nauki
Artykuł