- Tytuł:
- Comparison of Ultrafast Photodetectors Based on $N^+GaAs$ and LT GaAs
- Autorzy:
-
Białous, M.
Mogilinski, R.
Wierzbicki, M.
Świtkowski, K.
Pura, B. - Powiązania:
- https://bibliotekanauki.pl/articles/1505355.pdf
- Data publikacji:
- 2011-03
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
78.20.-e
78.47.J-
78.70.Ck - Opis:
- We present investigation of a photodetector based on nitrogen-ion-implanted GaAs. Device photoresponse signal shows 1.15 ps FWHM (400 GHz, 3 dB bandwidth) with the voltage amplitude ≈ 1 mV, measured using a constructed electro-optic sampling setup with 80 fs width, 795 nm wavelength and laser pulses repetition rate of 80 MHz. Changes in the shape of electrical signal for different beam powers excitation and voltage biases have been demonstrated, compared with LT GaAs photodetector based on the same finger geometry. Using technique of X-ray diffraction and diffuse scattering analyses we have observed the decrease of lattice constant, radius of nanoclusters after implantation, respectively, and linear density dislocations increased over twice.
- Źródło:
-
Acta Physica Polonica A; 2011, 119, 3; 382-386
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł