- Tytuł:
- Photoluminescence Studies of Cubic Phase GaN Grown by Molecular Beam Epitaxy on (001) Silicon Covered with Sic Layer
- Autorzy:
-
Godlewski, M.
Ivanov, V. Yu.
Bergman, J. P.
Monemar, B.
Barski, A.
Langer, R. - Powiązania:
- https://bibliotekanauki.pl/articles/1968103.pdf
- Data publikacji:
- 1997-10
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
71.55.Eq
78.47.+p - Opis:
- In this work we evaluate optical properties of cubic phase GaN epilayers grown on top of (001) silicon substrate prepared by a new process. Prior to the growth Si substrate was annealed at 1300-1400°C in propane. The so-prepared substrate is covered with a thin (≈ 4 nm) SiC wafer, which allowed a successful growth of good morphological quality cubic phase GaN epilayers. The present results confirm recent suggestion on smaller ionization energies of acceptors in cubic phase GaN epilayers.
- Źródło:
-
Acta Physica Polonica A; 1997, 92, 4; 777-780
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł