Wszystkie pola: Bugajski, J - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Fermi-Edge Singularity in Luminescence Spectra of P-Type Modulation Doped AlGaAs/GaAs Quantum Wells
Autorzy:: Bugajski, M.
Godlewski, M.
Regiński, K.
Holtz, P. O.
Bergman, J. P.
Monemar, B.
Powiązania:: https://bibliotekanauki.pl/articles/1969046.pdf
Data publikacji:: 1998-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 42.55.Px
73.20.Dx
Opis:: We have studied an enhancement of the oscillator strength for optical transitions near the Fermi energy in p-type modulation-doped quantum wells, which, so far, deserved much less attention than analogous n-type systems, because of the complicated valence band structure involved. The relatively wide (L=150 Å) quantum wells and high doping levels were used, containing more than one occupied subband. The enhancement in the photoluminescence intensity at the Fermi energy resulted from the strong correlation and multiple scattering of holes near the Fermi edge by the localized electrons.
Źródło:: Acta Physica Polonica A; 1998, 94, 2; 265-270
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Inter-Island Energy Transfer in AlGaAs/GaAs Quantum Wells Grown by Molecular Beam Epitaxy
Autorzy:: Godlewski, M.
Holz, P. O.
Bergman, J. P.
Monemar, B.
Regiński, K.
Bugajski, M.
Powiązania:: https://bibliotekanauki.pl/articles/1952469.pdf
Data publikacji:: 1996-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.66.Fd
78.47.+p
73.20.Jc
Opis:: The results of photoluminescence, time-resolved photoluminescence, photoluminescence excitation and photoluminescence kinetics studies are presented for a Al$\text{}_{0.3}$Ga$\text{}_{0.7}$As/GaAs quantum well system grown without growth interruptions at the interfaces. The time-resolved photoluminescence measurements show drift of excitons towards lower energy states induced in a quantum well by potential fluctuations. We present also a first direct evidence for migration of free excitons from the 24 to 25 ML regions of the quantum well and interpret these results within a linear rate model, deriving the transition rate of 290 ps$\text{}^{-1}$. Such inter-island migration processes have been observed till now only in growth interrupted structures.
Źródło:: Acta Physica Polonica A; 1996, 90, 5; 1007-1011
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Influence of Growth Conditions on Exciton Properties in Thin Quantum Wells of GaAs/AlGaAs
Autorzy:: Godlewski, M.
Bergman, J. P.
Holtz, P. O.
Monemar, B.
Bugajski, M.
Regiński, K.
Kaniewska, M.
Powiązania:: https://bibliotekanauki.pl/articles/1933743.pdf
Data publikacji:: 1995-10
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.55.Cr
73.20.Fz
71.35.+z
Opis:: Exciton properties in growth interrupted quantum wells of GaAs/AlGaAs are compared with those observed for structures grown without growth interruption during the molecular beam epitaxy process. We report observation of quasi-localized excitons in quantum well structures grown without growth interruptions. Quasi-localized excitons drift towards the states of a lower potential energy in the quantum well. For growth interrupted MBE structures islands with a constant quantum well thickness become large compared to the exciton radius. Free or lightly localized excitons are observed in that case.
Źródło:: Acta Physica Polonica A; 1995, 88, 4; 719-722
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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