- Tytuł:
- Pressure and Temperature Dependence of Threshold Current in Semiconductor Lasers Based on InGaAs/GaAs Quantum-Well Systems
- Autorzy:
-
Maziarz, M.
Piechal, B.
Bercha, A.
Bohdan, R.
Trzeciakowski, W.
Majewski, J. A. - Powiązania:
- https://bibliotekanauki.pl/articles/2047719.pdf
- Data publikacji:
- 2007-08
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
42.55.Px
85.60.Jb - Opis:
- In the present paper we demonstrate that wide-range wavelength tuning of semiconductor lasers can be achieved by applying high pressure and low temperature. We report the experimentally measured dependence of the threshold current and emission energy on pressure and temperature in InGaAs/GaAs quantum-well lasers and provide the simple theoretical explanation of the physics behind the experimental findings.
- Źródło:
-
Acta Physica Polonica A; 2007, 112, 2; 437-442
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł