- Tytuł:
- Analysis and design of a MOSFET-only wideband balun LNA
- Autorzy:
-
Bastos, I.
Oliveira, L. B.
Goes, J.
Silva, M. - Powiązania:
- https://bibliotekanauki.pl/articles/397861.pdf
- Data publikacji:
- 2010
- Wydawca:
- Politechnika Łódzka. Wydział Mikroelektroniki i Informatyki
- Tematy:
-
tranzystor polowy MOS-tylko obwody
redukcja hałasu
CMOS LNAs
MOSFET-only circuits
noise cancelling
wideband LNA - Opis:
- In this paper we present a MOSFET-only implementation of a balun LNA. This LNA is based on the combination of a common-gate and a common-source stage with cancellation of the noise of the common-gate stage. In this circuit, we replace resistors by transistors, to reduce area and cost, and to minimize the effect of process and supply variations and mismatches. In addition, we obtain a higher gain for the same voltage drop. Thus, the LNA gain is optimized and the noise figure (NF) is reduced. We derive equations for the gain, input matching and NF. The performance of this new topology is compared with that of a conventional LNA with resistors. Simulation results with a 130 nm CMOS technology show that we obtain a balun LNA with a peak gain of 20.2 dB (about 2 dB improvement), and a spot NF lower than 2.4 dB. The total power consumption is only 4.8 mW for a bandwidth higher than 6 GHz.
- Źródło:
-
International Journal of Microelectronics and Computer Science; 2010, 1, 3; 241-248
2080-8755
2353-9607 - Pojawia się w:
- International Journal of Microelectronics and Computer Science
- Dostawca treści:
- Biblioteka Nauki
Artykuł