- Tytuł:
- The role of fluorine-containing ultra-thin layer in controlling boron thermal diffusion into silicon
- Autorzy:
-
Kalisz, M.
Beck, R. B.
Barcz, A.
Ćwil, M. - Powiązania:
- https://bibliotekanauki.pl/articles/308657.pdf
- Data publikacji:
- 2007
- Wydawca:
- Instytut Łączności - Państwowy Instytut Badawczy
- Tematy:
-
fluorine
reactive ion etching
silicon fluoride
boron thermal diffusion
fluorocarbon plasma - Opis:
- We have investigated the influence of silicon dioxide reactive ion etching (RIE) parameters on the composition of the polymer layer that is formed during this process on top of the etched layer, and finally, the role of this layer in high-temperature thermal diffusion of boron into silicon. The polymeric layer formed on the etched surface appeared to consist of fluorine and silicon fluoride (SiOF and SiF). Concentration of these components changes depending on the parameters of RIE process, i.e., rf power, gas pressure and etching time. The composition of this polymeric layer affects, in turn, boron thermal diffusion into silicon. With increasing rf power, the depth of boron junction is increased, while increasing time of etching process reduces boron diffusion into silicon.
- Źródło:
-
Journal of Telecommunications and Information Technology; 2007, 3; 25-29
1509-4553
1899-8852 - Pojawia się w:
- Journal of Telecommunications and Information Technology
- Dostawca treści:
- Biblioteka Nauki
Artykuł