- Tytuł:
- Optical and Electrical Properties of High Temperature Annealed Heteroepitaxial GaN:Mg Layers
- Autorzy:
-
Wojdak, M.
Baranowski, J. M.
Suchanek, B.
Pakuła, K.
Jun, J.
Suski, T. - Powiązania:
- https://bibliotekanauki.pl/articles/1968449.pdf
- Data publikacji:
- 1997-11
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
78.66.Fd
73.61.Ey
78.55.Cr - Opis:
- In this paper we present for the first time luminescence and electrical measurements of GaN:Mg heteroepitaxial layers annealed at very high temperatures up to 1500°C and at high pressures of nitrogen up to 16 kbar. The presence of high nitrogen pressure prevents GaN from thermal decomposition. It was found that annealing in the presence of additional Mg atmosphere leads to a high quality p-type epitaxial layer of the hole concentration equal to 2×10$\text{}^{17}$ cm$\text{}^{-3}$ and mobility 16 cm$\text{}^{2}$/(V s). However, annealing at high temperatures without additional magnesium causes conversion to n-type. It is also shown that in the high temperature annealed GaN:Mg epilayers the donor-acceptor luminescence is the dominant recombination channel.
- Źródło:
-
Acta Physica Polonica A; 1997, 92, 5; 1059-1062
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł