- Tytuł:
- Luminescence Dynamics of Exciton Replicas in Homoepitaxial GaN Layers
- Autorzy:
-
Korona, K. P.
Baranowski, J. M.
Pakuła, K.
Monemar, B.
Bergman, J. P.
Grzegory, I.
Porowski, S. - Powiązania:
- https://bibliotekanauki.pl/articles/1968240.pdf
- Data publikacji:
- 1997-10
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
71.35.-y
78.47.+p
78.55.Cr - Opis:
- Photoluminescence of excitons and their phonon replicas in homoepitaxial MOCVD-grown gallium nitride (GaN) layers have been studied by picosecond (ps) time-resolved photoluminescence spectroscopy. The time-resolved photoluminescence spectroscopy has shown that the free excitons and their replicas have the fastest dynamics (decay time of about 100 ps). Then, the excitons-bound-to-donors emission rises (with the rise time similar to the free excitons decay time) and decays with t=300 ps. The excitons-bound-to-acceptors has the slowest decay (about 500 ps). It has been found that the ratio of excitons-bound-to-acceptors and excitons-bound-to-donors amplitudes and their decay times are different for 1-LO replicas and then for zero-phonon lines, whereas the ratio of amplitudes and the decay time of the 2-LO replicas are similar to the ones of the zero-phonon lines.
- Źródło:
-
Acta Physica Polonica A; 1997, 92, 4; 841-844
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł