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Wyszukujesz frazę "Molas, M." wg kryterium: Autor

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    Wyświetlanie 1-7 z 7
    Tytuł:
    Intershell Exchange Interaction in Charged GaAlAs Quantum Dots
    Autorzy:
    Molas, M.
    Nicolet, A.
    Potemski, M.
    Babiński, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1399082.pdf
    Data publikacji:
    2013-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.67.Hc
    71.35.-y
    78.55.Cr
    71.70.Gm
    Opis:
    Optical anisotropy of charged excitons and biexcitons related to the single-particle s- and p-shell emission in GaAlAs/AlAs quantum dots is investigated. The polarization-dependence and time-resolved micro-photoluminescence measurements were performed. Cross-correlation measurements were used to identify the ladder of excitonic states and allowed us to show two cascade pathways, including the spin singlet and triplet states of charged excitons and biexcitons. The fine structure of the studied states is described and analysed in terms of electron-electron, hole-hole, and electron-hole exchange interactions.
    Źródło:
    Acta Physica Polonica A; 2013, 124, 5; 785-787
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Fine Structure of Neutral Excitons in Single GaAlAs Quantum Dots
    Autorzy:
    Molas, M.
    Gołasa, K.
    Piętka, B.
    Potemski, M.
    Babiński, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1403612.pdf
    Data publikacji:
    2012-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Cr
    78.67.Hc
    Opis:
    Optical anisotropy of neutral excitons in GaAlAs/AlAs quantum dots is investigated. Low-temperature polarization-sensitive photoluminescence measurements of single quantum dots are performed. It is found that neutral excitons (X) in the quantum dots exhibit a fine structure splitting. The fine structure splitting ranges from 10 μeV to 100 μeV and correlates with the X energy. The polarization axis of the fine structure splitting is well oriented along [110] crystallographic direction of a substrate. The orientation is attributed to the elongation of GaAlAs/AlAs quantum dots in the [110] direction of the substrate.
    Źródło:
    Acta Physica Polonica A; 2012, 122, 6; 988-990
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Magnetic Field Effect on the Excitation Spectrum of a Neutral Exciton in a Single Quantum Dot
    Autorzy:
    Molas, M.
    Nicolet, A.
    Piętka, B.
    Babiński, A.
    Potemski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1375688.pdf
    Data publikacji:
    2014-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.67.Hc
    71.35.-y
    78.55.Cr
    Opis:
    Excitation-energy-dependent magnetospectroscopic measurements of a single GaAlAs/AlAs quantum dot were performed. A significant effect of the excitation energy on the photoluminescence spectra is reported. The photoluminescence excitation spectroscopy has been used to investigate the excitation spectrum of a single electron-hole pair - a neutral exciton in magnetic field up to 14 T. The observed resonances exhibit diamagnetic shift characteristic of an s-shell related emission. In our opinion, the creation of excited complexes involving an excited hole and a ground electron is responsible for the process.
    Źródło:
    Acta Physica Polonica A; 2014, 126, 5; 1066-1068
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Quantum Confinement in InAs/GaAs Systems with Self-Assembled Quantum Dots Grown Using In-Flush Technique
    Autorzy:
    Molas, M.
    Kuldová, K.
    Borysiuk, J.
    Wasilewski, Z.
    Babiński, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/2048050.pdf
    Data publikacji:
    2011-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Cr
    78.67.Hc
    Opis:
    The effect of In-flush technique application to the MBE-grown structure with self-assembled quantum dots is investigated in this work. The microphotoluminescence from structures with the InAs/GaAs dots grown with and without the In-flush has been investigated. We focus our attention on "not fully developed" dots, which can be clearly distinguished in the spectrum. The dots have also been identified in the transmission electron microscopy analysis of the structures. The In-flush does not influence a broad energy range of those features. Instead we have found that the anisotropic exchange energy splitting of neutral excitons confined in those in the structure grown with In-flush is substantially lower that the splitting in the structure with no In-flush. This observation confirms that the In-flush leads not only to better uniformity of self-assembled quantum dots but also to reduction of lateral potential, anisotropy, which is believed to result in the neutral exciton splitting.
    Źródło:
    Acta Physica Polonica A; 2011, 119, 5; 624-626
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    The Effect of Substrate on Vibrational Properties of Single-Layer MoS₂
    Autorzy:
    Gołasa, K.
    Molas, M.
    Nogajewski, K.
    Grzeszczyk, M.
    Zinkiewicz, M.
    Potemski, M.
    Babiński, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1398570.pdf
    Data publikacji:
    2016-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    63.22.-m
    71.35.-y
    78.20.-e
    78.30.-j
    Opis:
    We report on the Raman scattering from single-layer molybdenum disulfide (MoS₂) deposited on various substrates: Si/SiO₂, hexagonal boron nitride (h-BN), sapphire, as well as suspended. Room temperature Raman scattering spectra are investigated under both resonant (632.8 nm) and non-resonant (514.5 nm) excitations. A rather weak influence of the substrate on the Raman scattering signal is observed. The most pronounced, although still small, is the effect of h-BN, which manifests itself in the change of energy positions of the E' and A'₁ Raman modes of single-layer MoS₂. We interpret this modification as originating from van der Waals interaction between the MoS₂ and h-BN layers.
    Źródło:
    Acta Physica Polonica A; 2016, 130, 5; 1172-1175
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    The Fine Structure of a Triexciton in Single InAs/GaAs Quantum Dots
    Autorzy:
    Molas, M.
    Gołasa, K.
    Furman, M.
    Lapointe, J.
    Wasilewski, Z.
    Potemski, M.
    Babiński, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1403615.pdf
    Data publikacji:
    2012-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Cr
    78.67.Hc
    Opis:
    Results of experimental study of multiexcitonic emission related to the p-shell of single self-assembled InAs/GaAs quantum dots are presented. Optical properties of a first emission line to appear from the p-shell of a strongly excited quantum dots are investigated using low-temperature polarization-sensitive micro-photoluminescence measurements. The emission line is attributed to the recombination of a complex of three electrons and holes confined in a dot (neutral triexciton), 3X. It is found that the emission consists of two linearly polarized components and the fine structure splitting is larger than the respective splitting of a neutral exciton. The optical anisotropy of the 3X emission is related to the anisotropy of the quantum dot localizing potential. The axis of the 3X optical anisotropy changes from dot to dot covering broad range within ± 50 degrees with respect to the axis defined by the optical anisotropy of a neutral exciton (X). Possible origin of the deviation is discussed.
    Źródło:
    Acta Physica Polonica A; 2012, 122, 6; 991-993
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Properties of Excitons in Quantum Dots with a Weak Confinement
    Autorzy:
    Gołasa, K.
    Molas, M.
    Goryca, M.
    Kazimierczuk, T.
    Smoleński, T.
    Koperski, M.
    Golnik, A.
    Kossacki, P.
    Potemski, M.
    Wasilewski, Z.
    Babiński, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1399080.pdf
    Data publikacji:
    2013-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Cr
    78.67.Hc
    Opis:
    Statistical properties of neutral excitons, biexcitons and trions confined to natural quantum dots formed in the InAs/GaAs wetting layer are reported. The correlation of the trion binding energy and the biexciton binding energy was found. Magnetospectroscopic measurements of the excitons revealed also the correlation of excitonic effective $g^\ast $ factor of an exciton with the biexciton binding energy. The qualitative picture of the effect of quantum confinement on the observed correlations is presented.
    Źródło:
    Acta Physica Polonica A; 2013, 124, 5; 781-784
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-7 z 7

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