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    Wyświetlanie 1-10 z 10
    Tytuł:
    Changes of GaP: N Defect Structure under Hydrostatic Pressure
    Autorzy:
    Bąk-Misiuk, J.
    Domagała, J.
    Kozankiewicz, B.
    Misiuk, A.
    Adamczewska, J.
    Skibska, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1924323.pdf
    Data publikacji:
    1993-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    65.70.+y
    Opis:
    The changes of defect structure of GaP:N epitaxial layers subjected to hydrostatic pressures up to 1.8 GPa are investigated by X-ray diffraction and photoluminescence. The observed changes are more pronounced at higher pressures and depend on the nitrogen concentration, c$\text{}_{N}$, and on initial defect structure. Especially complex hydrostatic pressure induced properties are observed for the sample with c$\text{}_{N}$ > 10$\text{}^{20}$ at. cm$\text{}^{-3}$. The model explaining the hydrostatic pressure induced defect structure changes is proposed.
    Źródło:
    Acta Physica Polonica A; 1993, 83, 1; 87-93
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Hydrostatic Pressure Effect on Oxygen Precipitates in Silicon Single Crystal
    Autorzy:
    Misiuk, A.
    Adamczewska, J.
    Bąk-Misiuk, J.
    Härtwig, J.
    Morawski, A.
    Witczak, Z.
    Powiązania:
    https://bibliotekanauki.pl/articles/1890764.pdf
    Data publikacji:
    1991-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.70.At
    61.70.-r
    81.40.-z
    Opis:
    The effect of hydrostatic pressure on some properties of Cz-Si with oxygen precipitates is investigated. The observed phenomena are discussed in terms of misfit between the precipitates and Si matrix.
    Źródło:
    Acta Physica Polonica A; 1991, 80, 3; 317-320
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Oxygen Precipitation in Si:O Annealed under High Hydrostatic Pressure
    Autorzy:
    Misiuk, A.
    Bąk-Misiuk, J.
    Bryja, L.
    Kątcki, J.
    Ratajczak, J.
    Jun, J.
    Surma, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/2030659.pdf
    Data publikacji:
    2002-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.10.-i
    61.72.Yx
    81.40.Vw
    Opis:
    Effect of hydrostatic pressure up to 1.2 GPa on oxygen-implanted silicon, Si:O (O$\text{}^{+}$ dose, D, within the 6×10$\text{}^{17}$-2×10$\text{}^{18}$ cm$\text{}^{-2}$ range), treated at 1230-1570 K, was investigated by X-ray, transmission electron microscopy and photoluminescence methods. The pressure treatment affects oxygen precipitation and defect creation, especially in low oxygen dose implanted Si:O (D=6×10$\text{}^{17}$ cm$\text{}^{-2}$). Such investigation helps in understanding the stress related phenomena in Si wafers with buried insulating layer.
    Źródło:
    Acta Physica Polonica A; 2002, 101, 5; 719-727
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Transformation of AlGaAs/GaAs Interface under Hydrostatic Pressure
    Autorzy:
    Bąk-Misiuk, J.
    Domagała, J.
    Trela, J.
    Leszczyński, M.
    Misiuk, A.
    Härtwig, J.
    Prieur, E.
    Powiązania:
    https://bibliotekanauki.pl/articles/1945264.pdf
    Data publikacji:
    1996-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.40.-z
    65.70.+y
    Opis:
    AlGaAs layers grown by molecular beam epitaxy on GaAs substrates were investigated before and after high hydrostatic pressure (1.2 GPa) at high temperature (770 K) treatment (HP-HT treatment). An influence of HP-HT treatment on the properties of the AlGaAs/GaAs system was studied by lattice parameter measurements using the high resolution diffractometer and by X-ray topography. Observed changes in the lattice parameter of the AlGaAs layers after HP-HT treatment are related to the strain relaxation and explained by the creation of misfit dislocations and other extended defects which are visible on the topographs.
    Źródło:
    Acta Physica Polonica A; 1996, 89, 3; 405-409
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Defect Structure of Pressure Treated Czochralski Grown Silicon Investigated by X-Ray Topography and Diffractometry
    Autorzy:
    Misiuk, A.
    Härtwig, J.
    Prieur, E.
    Ohler, M.
    Bąk-Misiuk, J.
    Domagała, J.
    Surma, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1964154.pdf
    Data publikacji:
    1997-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.Yx
    81.40.Vw
    61.10.-i
    Opis:
    The defect structure of Czochralski grown silicon single crystals annealed at 870-1400 K under hydrostatic pressure up to 1 GPa was investigated by conventional and synchrotron radiation X-ray topography and by reciprocal space mapping. Hydrostatic pressure promotes oxygen precipitation from oversaturated Si-O solid solution and the creation of structural defects.
    Źródło:
    Acta Physica Polonica A; 1997, 91, 5; 987-991
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    X-ray Study of Strain Relaxation in Heteroepitaxial AlGaAs Layers Annealed under High Hydrostatic Pressure
    Autorzy:
    Bąk-Misiuk, J.
    Adamczewska, J.
    Misiuk, A.
    Regiński, K.
    Wierzchowski, W.
    Wieteska, K.
    Kozanecki, A.
    Kuritsyn, D.
    Glukhanyuk, W.
    Trela, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/2030644.pdf
    Data publikacji:
    2002-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.40.-z
    68.55.Ln
    Opis:
    The effect of treatment at up to 1270 K under hydrostatic argon pressure, up to 1.2 GPa, on strain relaxation of AlGaAs layers was investigated by X-ray diffraction and related methods. The 1.5μm thick AlGaAs layers were grown by molecular beam epitaxy method on 001 oriented semi-insulating GaAs substrate at 950 K. An increase in intensity of X-ray diffuse scattering, originating from hydrostatic pressure-induced misfit dislocations, was observed for all treated samples. For the samples treated at 920 K during 1 h under 0.6 GPa, the diffuse scattering was confined to the [110] crystallographic direction perpendicular to the direction of dislocations. For the samples treated at 1.2 GPa at the same temperature and time conditions as for 0.6G Pa, a different behaviour is observed, namely the diffuse scattering extends along all azimuthal directions, indicating that dislocations are created in both [110] and [¯110] directions. The change of strain after the treatment was most pronounced for the samples treated at 1.2 GPa for 1 h at 920 K.
    Źródło:
    Acta Physica Polonica A; 2002, 101, 5; 689-699
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Revealing the Defects Introduced in N- or Ge-doped Cz-Si by γ Irradiation and High Temperature-High Pressure Treatment
    Autorzy:
    Wieteska, K.
    Misiuk, A.
    Prujszczyk, M.
    Wierzchowski, W.
    Surma, B.
    Bąk-Misiuk, J.
    Romanowski, P.
    Shalimov, A.
    Capan, I.
    Yang, D.
    Graeff, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1812256.pdf
    Data publikacji:
    2008-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.05.c-
    61.72.-y
    61.82.-d
    Opis:
    Effect of processing under high hydrostatic pressure (= 1.1 GPa), applied at 1270 K, on Czochralski grown silicon with interstitial oxygen content $(c_O)$ up to $1.1×10^{18} cm^{-3}$, admixed with N or Ge (Si-N, c_N ≤ $1.2×10^{15} cm^{-3}$, or Si-Ge, $c_{Ge} ≈ 7×10^{17} cm^{-3}$, respectively), pre-annealed at up to 1400 K and next irradiated withγ-rays (dose, D up to 2530 Mrad, at energy E = 1.2 MeV), was investigated by high resolution X-ray diffraction, Fourier transform infrared spectroscopy, and synchrotron topography. Processing of γ-irradiated Si-N and Si-Ge under high pressure leads to stimulated precipitation of oxygen at the nucleation sites created by irradiation. It means that radiation history of Si-N and Si-Ge can be revealed by appropriate high temperature-high pressure processing.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 2; 439-446
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Growth of Ternary and Quaternary ZnSe Compounds with Transition Metals by Chemical Vapor Transport
    Autorzy:
    Janik, E.
    Grasza, K.
    Mycielski, A.
    Bąk-Misiuk, J.
    Kachniarz, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1929755.pdf
    Data publikacji:
    1993-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.10.Bk
    78.55.Et
    Opis:
    Halogen transport method was applied to grow the crystals of solid solutions of ZnSe and transition metals at the temperature far below the melting point and phase transition temperature. The large crystals of ZnMnSe, ZnFeSe, ZnNiSe and ZnFeSSe were obtained. The technological parameters and shape of the quartz reactor were chosen for growth of a large crystal by self-nucleation; the transparent quartz furnace enabled the control of nucleation by visual observation. The parameters of crystal growth were determined. The crystal quality was estimated by X-ray diffraction method. The composition of crystals was determined by electron microprobe analysis and energy dispersive X-ray fluorescence analysis.
    Źródło:
    Acta Physica Polonica A; 1993, 84, 4; 785-788
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    PVT-Grown Single Crystals of Cd$\text{}_{1-x}$Zn$\text{}_{x}$Te (x ≤ 0.25) and ZnTe as Substrates for Epitaxy
    Autorzy:
    Mycielski, A.
    Szadkowski, A.
    Łusakowska, E.
    Kowalczyk, L.
    Domagała, J.
    Bąk-Misiuk, J.
    Wilamowski, Z.
    Witkowska, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1991957.pdf
    Data publikacji:
    1998-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.05.Dz
    81.10.Bk
    Opis:
    The process of growth of single crystals of Cd$\text{}_{1-x}$Zn$\text{}_{x}$Te (x ≤ 0.25) and ZnTe by physical vapour transport has been optimized and the twin-free single crystals with a very good crystal structure and low density of dislocations are grown as substrates for MBE and other techniques of epitaxy. Characterization of the crystals is described.
    Źródło:
    Acta Physica Polonica A; 1998, 94, 3; 441-445
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Cubic MnTe - Growth by Molecular Beam Epitaxy and Basic Structural Characterization
    Autorzy:
    Zakrzewski, A.
    Janik, E.
    Dynowska, E.
    Leszczyński, M.
    Kutrowski, M.
    Wojtowicz, T.
    Karczewski, G.
    Bąk-Misiuk, J.
    Domagała, J.
    Kossut, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1873112.pdf
    Data publikacji:
    1995-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.50.Pp
    68.55.Bd
    68.55.Jk
    Opis:
    We report on growth by molecular beam epitaxy of thick layers of MnTe with zinc blende structure. Films as thick as 5.6 µm were obtained. Characterization by X-ray diffraction proved their good structural quality. We determined the lattice constant and its temperature dependence. Broad luminescence due to internal Mn$\text{}^{2+}$- transitions was observed. It showed an unexpected temperature dependence.
    Źródło:
    Acta Physica Polonica A; 1995, 87, 2; 433-436
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-10 z 10

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