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Wyświetlanie 1-13 z 13
Tytuł:
Fermi Level Position in GaMnAs - a Thermoelectric Study
Autorzy:
Osinniy, V.
Jędrzejczak, A.
Arciszewska, M.
Dobrowolski, W.
Story, T.
Sadowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/2027483.pdf
Data publikacji:
2001-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.20.Ck
75.30.Et
73.50.-h
Opis:
Thermoelectric power was studied in the temperature range 100≤ T≤300 K in 0.3-1μm thick ferromagnetic Ga$\text{}_{1-x}$Mn$\text{}_{x}$As epitaxial layers (0.015≤ x≤0.06) in order to determine Fermi energy E$\text{}_{F}$ and carrier concentration p. For 0.015≤ x≤0.05, at T=273 K we find E$\text{}_{F}$=275±50 meV and p=(2.5± 0.5)×10$\text{}^{20}$ cm$\text{}^{-3}$ (approximately Mn content independent). For x= 0.06, the Fermi energy decreases by about 100 meV with the corresponding reduction of hole concentration to p=1.2×10$\text{}^{20}$ cm$\text{}^{-3}$. At T=120 K, these parameters vary between E$\text{}_{F}$=380 meV and p=3.5×10$\text{}^{20}$ cm$\text{}^{-3}$ for x=0.015 to E$\text{}_{F}$=110 meV and p=5×10$\text{}^{19}$ cm$\text{}^{-3}$ for x=0.06.
Źródło:
Acta Physica Polonica A; 2001, 100, 3; 327-334
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Low-Frequency Raman Spectrum οf Bulk $Zn_{0.984}Co_{0.016}O$ Crystal
Autorzy:
Szuszkiewicz, W.
Łusakowski, A.
Morhange, J.
Gołacki, Z.
Arciszewska, M.
Brodowska, B.
Kanehisa, M.
Klepka, M.
Dobrowolski, W.
Powiązania:
https://bibliotekanauki.pl/articles/1807848.pdf
Data publikacji:
2009-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.50.Pp
78.30.Fs
Opis:
The influence of possible presence of $Co^{2+}$ ion pairs in a bulk $Zn_{1-x}Co_{x}O$ mixed crystal on the low-frequency part of the Raman spectrum is discussed. Two effects can be taken into account in the theoretical considerations when analyzing the energy level scheme corresponding to Co ions. The first is a local lattice deformation in the vicinity of $Co^{2+}$ ion due to a presence of the second ion, smaller than the host ZnO lattice cation. Such deformation creates a trigonal field, which can only slightly modify the energy levels of $Co^{2+}$ ion. The second effect, which results from an antiferromagnetic superexchange interaction between two $Co^{2+}$ ions is responsible for a new set of energy levels. The Raman data taken at low temperature on the sample corresponding to the composition x = 0.016 demonstrated the presence of two structures at about 6 $cm^{-1}$ and 13 $cm^{-1}$. These structures may be interpreted as electronic transitions between the ground state and the first excited state of a single $Co^{2+}$ ion in the substitution site of ZnO lattice and as a similar transition for $Co^{2+}$ ion pair, respectively.
Źródło:
Acta Physica Polonica A; 2009, 116, 1; 103-106
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magnetic Susceptibility of Cd$\text{}_{1-x}$Fe$\text{}_{x}$Te$\text{}_{1-y}$Se$\text{}_{y}$
Autorzy:
Arciszewska, M.
Mycielski, A.
Dobrowolski, W.
Lenard, A.
Mauger, A.
Witkowska, B.
Powiązania:
https://bibliotekanauki.pl/articles/1890693.pdf
Data publikacji:
1991-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.80.Ey
75.20.Hr
75.30.Cr
Opis:
Magnetic susceptibility of Cd$\text{}_{1-x}$Fe$\text{}_{x}$Te$\text{}_{1-y}$Se$\text{}_{y}$ was found to consist of Van Vleck term (characteristic for the Fe$\text{}^{2+}$ centers in tetrahedral crystal symmetry) and temperature-dependent contribution. The occurrence of the latter indicates an existence of additional magnetic moments. We ascribe their origin to the modification of the Fe$\text{}^{2+}$ energy level spectrum induced by mixed Te-Se anion environment.
Źródło:
Acta Physica Polonica A; 1991, 80, 2; 303-306
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
AC Magnetic Susceptibility Studies of $Ge_{1-x-y}Sn_{x}Mn_{y}Te$ Mixed Crystals
Autorzy:
Kilanski, L.
Arciszewska, M.
Domukhovski, V.
Dobrowolski, W.
Slynko, V.
Slynko, I.
Powiązania:
https://bibliotekanauki.pl/articles/1811934.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Fr
72.80.Ga
75.40.Gb
75.50.Lk
75.50.Pp
Opis:
We present preliminary studies of magnetic and transport properties of $Ge_{1-x-y}Sn_xMn_yTe$ mixed crystals with 0.091 ≤ x ≤ 0.105 and 0.012 ≤ y ≤ 0.115. Qualitative analysis of our experimental results showed the appearance of a spin-glass phase at T < 50 K. The transport characterization (resistivity and Hall effect measurements) showed that the investigated samples had semimetallic p-type conductivity with relatively large carrier concentrations (p > $10^{21} cm^{-3}$) and low mobilities (μ < 100 $cm^2 V^{-1} s^{-1}$). The dependence of transport properties on the chemical composition of the samples was observed.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1145-1150
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magnetic Properties of Sn$\text{}_{1-x}$Gd$\text{}_{x}$Te (0.002 ≤ x ≤ 0.09)
Autorzy:
Story, T.
Arciszewska, M.
Dobrowolski, W.
Gołacki, Z.
Górska, M.
Grodzicka, E.
Łusakowski, A.
Dynowska, E.
Witkowska, B.
Powiązania:
https://bibliotekanauki.pl/articles/1952098.pdf
Data publikacji:
1996-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.20.Ck
75.30.Et
Opis:
Magnetic, transport and structural properties of bulk crystals of Sn$\text{}_{1-x}$Gd$\text{}_{x}$Te with Gd content 0.002 < x < 0.09 and varying carrier concentrations obtained by an isothermal annealing were studied in the temperature range T = 1.5 - 80 K. We found the effect of resonant increase in antiferromagnetic spin-spin exchange interactions in the crystals with 0.025 ≤ x ≤ 0.05. No effect was found in crystals either with higher (x > 0.05) or with lower (x < 0.025) Gd concentration. The observed Gd composition dependence of the magnetic and transport properties of SnGdTe can be explained in a proposed model relating these experimental properties to the Gd composition induced shift of the position of Gd$\text{}^{3+}\text{}^{/}\text{}^{2+}$ level with respect to the top of the valence band of SnGdTe.
Źródło:
Acta Physica Polonica A; 1996, 90, 5; 935-938
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Transport and Magnetic Study of Gd Ions in Pb$\text{}_{1-y}$Sn$\text{}_{y}$Te
Autorzy:
Story, T.
Arciszewska, M.
Łazarczyk, P.
Łusakowski, A.
Górska, M.
Dobrowolski, W.
Witkowska, B.
Grodzicka, E.
Gałązka, R. R.
Powiązania:
https://bibliotekanauki.pl/articles/1968424.pdf
Data publikacji:
1997-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.20.Ck
75.30.Et
Opis:
Electric conductivity, Hall effect and magnetic susceptibility of Pb$\text{}_{1-x-y}$ Sn$\text{}_{y}$Gd$\text{}_{x}$Te mixed crystals with 0.13 ≤ y ≤ 0.93 and 0.001 ≤ x ≤ 0.04 were experimentally studied over the temperature range 4K ≤ T ≤ 300 K. The incorporation of Gd ions into the Pb$\text{}_{1-y}$Sn$\text{}_{y}$Te matrix results in semi-metallic n-type conductivity of the crystals with y < 0.6. For crystals with y > 0.6 one observes only semi-metallic p-type conductivity. We present a model explaining these results in terms of the Sn composition dependence of the location of Gd$\text{}^{2+}\text{}^{/}\text{}^{3+}$ level with respect to the band edges of PbSnGdTe.
Źródło:
Acta Physica Polonica A; 1997, 92, 5; 997-1000
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Manifestation of Spin-Glass-Like Behavior in the Organometallic Magnet
Autorzy:
Dyakonov, V. P.
Arciszewska, M.
Dobrowolski, W.
Szewczyk, A.
Szymczak, H.
Aksymentieva, E.
Varyukhin, V.
Zubov, E.
Gutowska, M. U.
Powiązania:
https://bibliotekanauki.pl/articles/2013705.pdf
Data publikacji:
2000-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.30.Kz
75.40.Cx
Opis:
Ac susceptibility (χ$\text{}_{ac}$) and dc magnetization (M$\text{}_{dc}$) of the organometallic magnet Na[FeO$\text{}_{6}$(C$\text{}_{10}$H$\text{}_{8}$N)$\text{}_{3}$] have been studied in temperature range of 4.2-200 K, in an external magnetic field up to 16 kOe. Some peculiarities of the χ$\text{}_{ac}$ and M $\text{}_{dc}$ behavior, which are characteristic of spin-glasses, e.g. cusps in the susceptibility and zero-field-cooled magnetization, an irreversibility between the field-cooled and zero-field-cooled magnetization and dependences of the T$\text{}_{cusp}$ temperature on the frequency and the intensity of the magnetic field, were observed at low temperatures.
Źródło:
Acta Physica Polonica A; 2000, 97, 5; 863-866
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electrical, Magnetic, and Structural Properties of Sn$\text{}_{1-x}$Mn$\text{}_{x}$Te Layers Grown by Molecular Beam Epitaxy
Autorzy:
Nadolny, A. J.
Sadowski, J.
Story, T.
Dobrowolski, W.
Arciszewska, M.
Świątek, K.
Kachniarz, J.
Adamczewska, J.
Powiązania:
https://bibliotekanauki.pl/articles/1992036.pdf
Data publikacji:
1998-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.20.Ck
75.30.Et
68.55.-a
Opis:
Layers of Sn$\text{}_{1-x}$Mn$\text{}_{x}$Te (x ≤ 0.1) with thickness 0.2-2 μm were grown by molecular beam epitaxy on BaF$\text{}_{2}$ substrates with a 0.01-1 μm thick SnTe buffer layer. Both SnTe and Sn$\text{}_{1-x}$Mn$\text{}_{x}$Te layers show metallic p-type conductivity with conducting hole concentrations (at T=77 K) p$\text{}_{77}$=7×10$\text{}^{19}$ -2×10$\text{}^{21}$ cm$\text{}^{-3}$. The layers grown under the conditions of an extra Te flux have a high carrier concentration and exhibit ferromagnetic phase transition at T$\text{}_{C}$ ≤ 7 K. The layers grown with no (or very low) additional Te flux show low carrier concentrations (below 10$\text{}^{20}$ cm$\text{}^{-3}$) and remain paramagnetic in the temperature range studied T=4.5÷70 K.
Źródło:
Acta Physica Polonica A; 1998, 94, 3; 449-453
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magnetic Order and Magnetic Inhomogeneities in SnCrTe-PbCrTe Solid Solutions
Autorzy:
Kilanski, L.
Szymański, M.
Brodowska, B.
Górska, M.
Szymczak, R.
Podgórni, A.
Avdonin, A.
Reszka, A.
Kowalski, B.
Domukhovski, V.
Arciszewska, M.
Dobrowolski, W.
Slynko, V.
Slynko, E.
Powiązania:
https://bibliotekanauki.pl/articles/1376790.pdf
Data publikacji:
2014-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.80.Ga
75.30.Hx
75.30.Et
75.50.Pp
Opis:
We present the studies of structural, electrical and magnetic properties of bulk $Sn_{1-x-y}Pb_xCr_yTe$ mixed crystals with chemical composition 0.18 ≤ x ≤ 0.35 and 0.007 ≤ y ≤ 0.071. The magnetometric studies indicate that for the high Cr-content, y=0.071, the alloy shows ferromagnetic alignment with the Curie temperature, $T_{C}$, around 265 K. The $Cr_5Te_8$ clusters are responsible for the ferromagnetic order. At low Cr content, y ≈ 0.01, a peak in the ac magnetic susceptibility identified as the cluster-glass-like transition is observed at a temperature about 130 K. The cluster-glass-like transition is likely due to the presence of $Cr_2Te_3$ clusters in the samples with y ≈ 0.01. The transport characterization of the samples indicated strong metallic p-type conductivity with relatively high carrier concentration, n > $10^{20}$ $cm^{-3}$, and carrier mobility, μ > 150 $cm^2$/(V s).
Źródło:
Acta Physica Polonica A; 2014, 126, 5; 1203-1206
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Role of Frustration in Magnetism of Ge$\text{}_{1-x}$Cr$\text{}_{x}$Te Semimagnetic Semiconductor
Autorzy:
Kilanski, L.
Górska, M.
Dobrowolski, W.
Arciszewska, M.
Domukhovski, V.
Anderson, J. R.
Butch, N. P.
Podgórni, A.
Slynko, V. E.
Slynko, E. I.
Powiązania:
https://bibliotekanauki.pl/articles/2048082.pdf
Data publikacji:
2011-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.40.Cx
75.40.Gb
75.50.Lk
75.50.Pp
Opis:
We present preliminary studies of magnetic properties of Ge$\text{}_{1-x}$Cr$\text{}_{x}$Te semimagnetic semiconductors with low chromium content x < 0.026. The static and dynamic magnetometry techniques were employed for the current investigations. The obtained results showed large bifurcations between zero-field cooled and field cooled magnetization curves at temperatures lower than 50 K. The dynamic susceptibility measurements proved via frequency shifting of the peaks that the observed magnetic order at low temperatures was the spin-glass-like state caused by magnetic frustration of the system.
Źródło:
Acta Physica Polonica A; 2011, 119, 5; 654-656
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magnetic Anisotropy in Eus-pbs Multilayers
Autorzy:
Story, T.
Swüste, C. H. W.
Swagten, H. J. M.
de Jonge, W. J. M.
Stachow-Wójcik, A.
Twardowski, A.
Arciszewska, M.
Dobrowolski, W.
Gałązka, R. R.
Sipatov, A. Yu.
Powiązania:
https://bibliotekanauki.pl/articles/2013042.pdf
Data publikacji:
2000-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.50.Pp
75.70.Ak
Opis:
We present the results of ferromagnetic resonance studies of the thickness dependence of magnetic anisotropy in 2 series of EuS-PbS multilayers grown on (111) BaF$\text{}_{2}$ and (100) KCl substrates with the EuS thickness varying in the range d=6-70 Å. The anisotropy constant K was found to follow the dependence K(d)=K$\text{}_{V}$+2K$\text{}_{S}$/d , with the surface term K$\text{}_{S}$ larger for layers grown on BaF$\text{}_{2}$ as compared to KCl. This difference is discussed in terms of different thermal stress-induced distortions of cubic crystal lattice of EuS. We found that the thickness of EuS layer required for the perpendicular (to the layer) magnetization is d ≤ 2-3 Å, i.e., it is below 1 monolayer.
Źródło:
Acta Physica Polonica A; 2000, 97, 3; 435-438
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Transport and Magnetic Properties of Pb$\text{}_{1-x}$Mn$\text{}_{x}$Te Doped with Cr and Mo
Autorzy:
Artamkin, A. I.
Kozhanov, A. E.
Arciszewska, M.
Dobrowolski, W. D.
Story, T.
Slynko, E. I.
Slynko, V. E.
Khokhlov, D. R.
Powiązania:
https://bibliotekanauki.pl/articles/2038231.pdf
Data publikacji:
2004-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.28.+d
Opis:
Transport and magnetic properties of Pb$\text{}_{1-x}$Mn$\text{}_{x}$Te (x<0.18) semiconductor alloys doped with Cr or Mo are investigated in a broad range of temperatures and magnetic fields. In PbMnTe(Cr) alloys the Fermi level may be pinned either in the conduction band or in the energy gap, depending on Mn concentration. In PbMnTe(Mo) alloys the pinning of the Fermi level is observed in the valence band as well as in the energy gap. In the latter case persistent photoconductivity is observed at low temperatures. The analysis of the temperature dependence of magnetic susceptibility shows that PbMnTe alloys doped with Cr or Mo are Curie-Weiss paramagnets revealing weak antiferromagnetic interactions between magnetic ions.
Źródło:
Acta Physica Polonica A; 2004, 106, 2; 223-231
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
(Eu,Gd)Te - MBE Growth and Characterization
Autorzy:
Dziawa, P.
Taliashvili, B.
Domuchowski, W.
Łusakowska, E.
Arciszewska, M.
Demchenko, I.
Dobrowolski, W.
Dybko, K.
Fedorych, O. M.
Nadolny, A. J.
Osinniy, V.
Petrouchyk, A.
Story, T.
Powiązania:
https://bibliotekanauki.pl/articles/2038228.pdf
Data publikacji:
2004-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.50.Pp
81.15.Hi
Opis:
Monocrystalline thin layers of (Eu,Gd)Te, n-type ferromagnetic semiconductor, were grown by molecular beam epitaxy technique on BaF$\text{}_{2}$ (111) substrates. Reflection high-energy electron diffraction, X-ray diffraction, and atomic force microscopy characterization proved epitaxial mode of growth and high crystal quality of the layers. Magnetic susceptibility and magnetic resonance measurements showed that in (Eu,Gd)Te layers ferromagnetic transition takes place at about 13 K. Electrical characterization carried out by the Hall effect and resistivity measurements revealed very high electron concentration of 10$\text{}^{20}$~cm$\text{}^{-3}$ and sharp maximum of resistivity at transition temperature.
Źródło:
Acta Physica Polonica A; 2004, 106, 2; 215-221
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-13 z 13

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