- Tytuł:
- (Eu,Gd)Te - MBE Growth and Characterization
- Autorzy:
-
Dziawa, P.
Taliashvili, B.
Domuchowski, W.
Łusakowska, E.
Arciszewska, M.
Demchenko, I.
Dobrowolski, W.
Dybko, K.
Fedorych, O. M.
Nadolny, A. J.
Osinniy, V.
Petrouchyk, A.
Story, T. - Powiązania:
- https://bibliotekanauki.pl/articles/2038228.pdf
- Data publikacji:
- 2004-08
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
75.50.Pp
81.15.Hi - Opis:
- Monocrystalline thin layers of (Eu,Gd)Te, n-type ferromagnetic semiconductor, were grown by molecular beam epitaxy technique on BaF$\text{}_{2}$ (111) substrates. Reflection high-energy electron diffraction, X-ray diffraction, and atomic force microscopy characterization proved epitaxial mode of growth and high crystal quality of the layers. Magnetic susceptibility and magnetic resonance measurements showed that in (Eu,Gd)Te layers ferromagnetic transition takes place at about 13 K. Electrical characterization carried out by the Hall effect and resistivity measurements revealed very high electron concentration of 10$\text{}^{20}$~cm$\text{}^{-3}$ and sharp maximum of resistivity at transition temperature.
- Źródło:
-
Acta Physica Polonica A; 2004, 106, 2; 215-221
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł