- Tytuł:
- Infrared Lateral Photoconductivity of InGaAs Quantum Dots: the Temperature Dependence
- Autorzy:
-
Moldavskaya, L. D.
Shashkin,, V. I.
Drozdov,, M. N.
Daniltsev, V. M.
Antonov, A. V.
Yablonsky, A. N. - Powiązania:
- https://bibliotekanauki.pl/articles/2036025.pdf
- Data publikacji:
- 2003-06
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
78.30.Fs
78.55.Cr
78.66.Fd - Opis:
- We report the temperature dependence of lateral infrared photoconductivity in multilayer InGaAs/GaAs heterostructures with selectively doped quantum dots fabricated by metalorganic chemical vapor deposition. Two spectral lines of normal-inci dence intersubband photoconductivity (90 meV and 230 meV) and a line originating from interband transitions (930 meV) were observed. The photoconductivity line 230 meV is revealed up to the temperature 140 K. The long-wavelength photoconductivity line 90 meV is quenched rapidly at the temperature 30÷40 K owing to redistribution of photoexcited carriers between small and large dots. The obtained results confirm the hypothesis about bimodal distribution of quantum dot sizes.
- Źródło:
-
Acta Physica Polonica A; 2003, 103, 6; 579-584
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł