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Wyszukujesz frazę "Andreev, I." wg kryterium: Autor


Wyświetlanie 1-4 z 4
Tytuł:
Population genetic structure of Iris pumila L. in Ukraine: effects of habitat fragmentation
Autorzy:
Bublyk, O.
Andreev, I.
Parnikoza, I.
Kunakh, V.
Powiązania:
https://bibliotekanauki.pl/articles/2117815.pdf
Data publikacji:
2020
Wydawca:
Polska Akademia Nauk. Czasopisma i Monografie PAN
Tematy:
conservation
genetic polymorphism
habitat fragmentation
ISSR markers
population
genetics
Opis:
Habitat fragmentation is one of serious threats to biodiversity of nature in today's world. The present study of a typical steppe species Iris pumila L. (Iridaceae) has analyzed the impacts of geographical isolation and population size on genetic diversity and population structure in conditions of habitat fragmentation. The key indices of population genetic variability calculated from the ISSR markers data were on average as follows: Shannon diversity index (S) – 0.188; unbiased Nei’s gene diversity (He ) – 0.123; and the average measure of Jaccard’s genetic distances between individuals within populations – 58.4%. Although the largest population had significantly higher values of S and He, the small and marginal populations also showed a comparable level of variation. Most of the genetic variation of I. pumila was distributed within the populations. A strong correlation was found between Nei’s genetic distances and geographic distances between the populations. According to the Bayesian analysis, genetic structure of the populations was highly homogeneous; however, the presence of admixed genotypes indicated the possibility of gene flow between the populations at present.
Źródło:
Acta Biologica Cracoviensia. Series Botanica; 2020, 62, 1; 51-61
0001-5296
Pojawia się w:
Acta Biologica Cracoviensia. Series Botanica
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electrical and Optical Characteristics of $n-GaSb//n-GaIn_{0.24}AsSb//p-GaAl_{0.34}AsSb$ Heterostructure Photodiode
Autorzy:
Ahmetoglu, M.
Kucur, B.
Andreev, I.
Kunitsyna, E.
Mikhailova, M.
Yakovlev, Y.
Powiązania:
https://bibliotekanauki.pl/articles/1401231.pdf
Data publikacji:
2015-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.-i
73.40.Kp
72.40.+w
Opis:
In the present paper, electrical and optical properties of $n-GaSb//n-GaIn_{0.24}AsSb//p-GaAl_{0.34}AsSb$ double heterostructure (DH) with a diameter of 0.3 mm are reported. The current-voltage (I-V) characteristics of the structure were investigated at several temperatures in both, dark and under the illumination conditions. The effect of illumination was studied at different intensity values. Short circuit current and open circuit voltage as a function of intensity of incident light in photovoltaic mode are investigated.
Źródło:
Acta Physica Polonica A; 2015, 127, 4; 1007-1009
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electrical Properties of GaInAsSb/GaSb/GaAlAsSb Double Heterostructure with Low Diameter
Autorzy:
Kucur, B.
Ahmetoglu, M.
Andreev, I.
Kunitsyna, E.
Mikhailova, M.
Yakovlev, Y.
Powiązania:
https://bibliotekanauki.pl/articles/1194577.pdf
Data publikacji:
2014-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.-c
78.66.-w
85.60.Dw
Opis:
GaInAsSb/GaSb/GaAlAsSb double heterostructures are attractive for optoelectronic devices working in the 1.5-4.8 μm wavelength region. In this paper, the current mechanisms of liquid phase epitaxy grown GaInAsSb based double heterostructures with 100 μm diameter were investigated in the temperature range 77-350 K. It was found that diffusion current dominates at the high temperature (> 240 K) and small forward bias region, while generation-recombination current dominates at intermediate temperatures (242-171 K). At low temperature region (< 171 K), the tunneling mechanism of the current flow dominates in both forward and reverse biases.
Źródło:
Acta Physica Polonica A; 2014, 125, 2; 411-413
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electrical Characteristics and Temperature Dependence of Photovoltaic Parameters of GaInAsSb Based TPV Diode
Autorzy:
Kucur, B.
Ahmetoglu, M.
Andreev, I.
Kunitsyna, E.
Mikhailova, M.
Yakovlev, Y.
Powiązania:
https://bibliotekanauki.pl/articles/1398767.pdf
Data publikacji:
2016-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Lq
72.40.+w
85.60.-q
Opis:
In this paper, electrical characterization of low bandgap GaInAsSb based thermophotovoltaic (TPV) diodes were investigated, as well as the temperature dependence of photovoltaic parameters such as short circuit current $(I_{sc})$ and open circuit voltage $(V_{oc})$. Investigation of the dark current mechanisms of the structure was carried out at several temperatures. The effect of light intensity on current-voltage characteristics was also investigated.
Źródło:
Acta Physica Polonica A; 2016, 129, 4; 767-769
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-4 z 4

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