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Wyszukujesz frazę "Yakuphanoğlu, F." wg kryterium: Autor


Wyświetlanie 1-3 z 3
Tytuł:
Improvement of Efficiency in CdS Quantum Dots Sensitized Solar Cells
Autorzy:
Wageh, S.
Al-Ghamdi, A.
Soylu, M.
Al-Turki, Y.
El Shirbeeny, W.
Yakuphanoglu, F.
Powiązania:
https://bibliotekanauki.pl/articles/1399329.pdf
Data publikacji:
2013-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
85.35.Be
88.40.hj
72.80.Vp
68.47.Gh
Opis:
CdS quantum dots were coated on $TiO_2$ layer by successive ionic layer adsorption and reaction method. An efficient photovoltaic energy conversion and significant quantum-size effect were observed. The magnitude of the short-circuit photocurrent density $J_{SC}$ was found to be approximately 6.01 $mA//cm^2$ for graphene oxide-incorporated $CdS//TiO_2$ solar cell, while the $J_{SC}$ of only CdS-sensitized solar cells was lower than 4.40 $mA//cm^2$. The efficiency of the $CdS//TiO_2$ solar cell with a graphene oxide layer containing CdS QDs was 60% higher than that of the $CdS//TiO_2$ solar cell. The cell efficiency was remarkably improved with the graphene oxide-incorporation. The carrier recombination of the QDs sensitized solar cells based on CdS-coated $TiO_2$ was significantly suppressed due to photogenerated charge carrier transports resulting from the presence of graphene oxide.
Źródło:
Acta Physica Polonica A; 2013, 124, 4; 750-754
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
A DNA Biosensor Based Interface States of a Metal-Insulator-Semiconductor Diode for Biotechnology Applications
Autorzy:
Al-Ghamdi, A.
Al-Hartomy, O.
Gupta, R.
El-Tantawy, F.
Taskan, E.
Hasar, H.
Yakuphanoglu, F.
Powiązania:
https://bibliotekanauki.pl/articles/1489876.pdf
Data publikacji:
2012-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Jn
81.05.Fb
73.30.+y
Opis:
We studied how a DNA sensor based on the interface states of a conventional metal-insulator-semiconductor diode can be prepared for biotechnology applications. For this purpose, the p-type silicon/metal diodes were prepared using $SiO_2$ and DNA layers. The obtained results were analyzed and compared with interfaces of DNA and $SiO_2$. It is seen that the ideality factor (1.82) of the $Al//p-Si//SiO_2//DNA//Ag$ diode is lower than that (3.31) of the $Al//p-Si//SiO_2//Ag$ diode. This indicates that the electronic performance of DNA/Si junction was better than that of $SiO_2//Si$ junction. The interface states of the $Al//p-Si//SiO_2//DNA//Ag$ and $Al//p-Si//SiO_2//Ag$ junctions were analyzed by conductance technique. The obtained D_{it} values indicate that the DNA layer is an effective parameter to control the interface states of the conventional Si based on metal/semiconductor contacts. Results exhibited that DNA based metal-insulator-semiconductor diode could be used as DNA sensor for biotechnology applications.
Źródło:
Acta Physica Polonica A; 2012, 121, 3; 673-677
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Determination of Optical Constants of Nanocluster CdO Thin Films Deposited by Sol-Gel Technique
Autorzy:
Serbetci, Z.
Gunduz, B.
Al-Ghamdi, A.
Al-Hazmic, F.
Arık, K.
El-Tantawy, F.
Yakuphanoglu, F.
Farooq, W.
Powiązania:
https://bibliotekanauki.pl/articles/1205426.pdf
Data publikacji:
2014-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.67.Bf
78.20.Ci
81.20.Fw
Opis:
The optical properties of the CdO and Pt doped CdO thin films synthesized by sol-gel technique were investigated. The lowest grain size value (81.34 nm) was found to be for CdO thin film. The Pt doped CdO films are transformed to clusters with nanoparticles. The transparency properties of the CdO thin film is changed with Pt doping. The plots of refractive index indicate abnormal and normal dispersion regions. The refractive index values of the CdO thin film are changed with Pt doping. The direct optical band gap values of the films were changed with doping of Pt. The film of 0.5% Pt doped CdO indicates the lowest optical band gap value (2.421 eV). The imaginary parts of the optical conductivity of the CdO and Pt doped CdO thin films are higher than that of the real parts of the optical conductivity.
Źródło:
Acta Physica Polonica A; 2014, 126, 3; 798-807
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-3 z 3

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