Temat: 74.25.fc - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Preparation and Switching Behavior Characterization οf Some Quaternary Thallium Chalcogenide Compounds
Autorzy:: Al Orainy, R.
Nagat, A.
Powiązania:: https://bibliotekanauki.pl/articles/1400402.pdf
Data publikacji:: 2013-01
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 74.25.fc
Opis:: Investigation of the switching phenomenon on TlGaSSe single crystal revealed that it is typical for a memory switch. The switching process takes place with both polarities on the crystal and have symmetrical shapes. Current-voltage characteristics (CVC) of symmetrical Ag/TlGaSSe/Ag structures exhibit two distinct regions, high resistance "OFF" state and low resistance "ON" state having negative differential resistance. In addition, TlGaSSe is a quarternary semiconductor exhibiting S-type I-V characteristics. The experimental results indicate that the phenomenon in our sample is very sensitive to temperature; light intensity and sample thickness. The switching parameters were checked under the influence of different factors of the ambient condition. The present investigation is the first one on switching phenomenon of TlGaSSe.
Źródło:: Acta Physica Polonica A; 2013, 123, 1; 121-125
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: A Contribution of Thermoelectric Properties of the Quaternary Chalcogenide Compound Tl_2GaInSe_4 Crystal
Autorzy:: Al Orainy, R.
Powiązania:: https://bibliotekanauki.pl/articles/1399313.pdf
Data publikacji:: 2013-10
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 74.25.fc
Opis:: Thermoelectric transport measurements were made on single crystal samples of $Tl_2GaInSe_4$. The crystal was prepared by a special design based on the Bridgman technique. Measurements of thermoelectric power were carried out in a special high vacuum-tight calorimeter when the direction of temperature gradient is perpendicular to the cleavage plane. The measurements covered a temperature range extending from 300 to 725 K. The results indicate P-type conductivity for our investigated samples. At room temperature the value of thermoelectric power was 735 μV/deg. The electron to hole mobility ratio was found to be 1.35. The effective mass of holes at room temperature was evaluated as $4.635 \times 10^{-29}$ kg, while for electron was equal to $8.468 \times 10^{-31}$ kg. The relaxation time of majority and minority carriers was estimated as $\tau_p= 2.968 \times 10^{-10}$ s and $\tau_n= 7.326 \times 10^{-12}$ s, respectively. Also, the diffusion coefficient of holes and electrons at room temperature was calculated and found to be 265.132 $cm^2$/s and 358.139 $cm^2$/s, respectively. The diffusion length of holes and electrons are found to be $L_p=2.805 \times 10^{-4}$ cm and $L_n=5.122 \times 10^{-5}$ cm. In addition to these pronounced parameters, the efficiency of thermoelectric element (figure of merit) was evaluated which leads to better applications in many fields.
Źródło:: Acta Physica Polonica A; 2013, 124, 4; 728-731
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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