- Tytuł:
- High Performance Hybrid Silicon Evanescent Traveling Wave Electroabsorption Modulators
- Autorzy:
-
Abedi, K.
Afrouz, H. - Powiązania:
- https://bibliotekanauki.pl/articles/1399960.pdf
- Data publikacji:
- 2013-02
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
- 85.35.Be
- Opis:
- In this paper, for the first time, a high performance hybrid silicon evanescent traveling wave electroabsorption modulator based on asymmetric intra-step-barrier coupled double strained quantum wells active layer is introduced which has double steps at III/V mesa structure. Through this active layer, hybrid silicon evanescent traveling wave electroabsorption modulator will be advantages such as very low insertion loss, zero chirp, high extinction ratio, and large Stark shift and better figures of merit as compared with multiquantum well and intra-step quantum well structures. Furthermore, traveling wave electroabsorption modulator with double steps III/V mesa structure results in a wider bandwidth as compared with one-step III/V mesa and mushroom structures. For the modulator with double steps III/V mesa structure with a 200 μm length, the 3 dB bandwidths are obtained as 132 and 52 GHz for 25 and 40 Ω characteristic impedances, respectively.
- Źródło:
-
Acta Physica Polonica A; 2013, 123, 2; 415-417
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł