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Wyszukujesz frazę "Łusakowski, A." wg kryterium: Autor

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    Wyświetlanie 1-9 z 9
    Tytuł:
    Influence of Impact Ionization of Shallow Donors on Luminescence in GaAs
    Autorzy:
    Wysmołek, A.
    Łusakowski, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1932094.pdf
    Data publikacji:
    1995-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.-m
    72.20.Ht
    Opis:
    Luminescence spectra of n-type molecular beam epitaxial layer and semi-insulating liquid encapsulated Czochralski grown bulk GaAs were measured at liquid helium temperature for zero electric field and for fields which caused impact ionization of shallow donors. Application of the electric field caused a decrease in the luminescence intensity and a broadening of all observed structures. It was found that the electric field changed the luminescence spectrum of the n-type material in a different way than it did in the case of the semi-insulating one. For the n-type sample, an intensity of excitonic lines decreased much more than that of donor-acceptor lines when the electric field grew. A contrary was observed for the semi-insulating sample. An explanation of the result is proposed which takes into account an influence of ionised impurity scattering and localization in fluctuations of the electrostatic potential on the luminescence process.
    Źródło:
    Acta Physica Polonica A; 1995, 87, 1; 261-264
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Fractal Dimensions from Chaotic Oscillations in Semi-Insulating GaAs
    Autorzy:
    Zduniak, A.
    Łusakowski, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1929673.pdf
    Data publikacji:
    1993-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    05.45.+b
    72.20.Ht
    Opis:
    Relaxation and domain current oscillations in undoped semi-insulating GaAs were observed at room temperature for a broad range of voltage applied to a sample. The oscillations were characterized by a reconstruction of an attractor of the system. An analysis of the attractor helped to discriminate between the two likes of oscillations. A transition from one like of oscillations to the other was connected with a chaotization of the current. A chaotic state of the system was analyzed by calculations of fractal dimensions D$\text{}_{q}$ for -0.6 < g < 40 and the f(α) function.
    Źródło:
    Acta Physica Polonica A; 1993, 84, 3; 575-578
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Autocorrelation Function and Mutual Information from Short Experimental Time Series
    Autorzy:
    Zduniak, A.
    Łusakowski, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1932093.pdf
    Data publikacji:
    1995-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    05.45.+b
    Opis:
    A nonlinear dynamics of self-generated current oscillations in semi-insulating GaAs was studied by the reconstruction of an attractor from a short (14500 points) time series. Two methods of choosing of a time constant (τ) for this reconstruction are compared. One of them assumes τ to be an argument of the first zero of the autocorrelation function and the other takes τ as an argument of the first minimum of the mutual information. It is shown that for periodic oscillations both methods are equivalent, but for chaotic ones only the mutual information gives a time constant which does not depend on a time series used for calculations.
    Źródło:
    Acta Physica Polonica A; 1995, 87, 1; 257-260
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Electron Temperature in Semi-Insulating GaAs for Low Electric Fields
    Autorzy:
    Zduniak, A.
    Łusakowski, J.
    Nowak, G.
    Powiązania:
    https://bibliotekanauki.pl/articles/1923732.pdf
    Data publikacji:
    1992-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.20.Ht
    Opis:
    Heating of electrons by electric fields smaller than that required for generation of domain oscillations was investigated in samples of EL2-rich semi-insulating GaAs. Current-voltage characteristics were measured as a function of temperature between 268 K and 330 K. They exhibit a sublinear shape which is interpreted as a result of an enhanced electron capture on the EL2. The capture rate and the electron temperature as a function of the electric field was determined. A fitting procedure gave the value of electron capture cross-section on the EL2 to be 2.7 × 10$\text{}^{-13}$ cm$\text{}^{2}$ which agrees with literature data.
    Źródło:
    Acta Physica Polonica A; 1992, 82, 5; 777-780
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Magnetoconductivity of GaAs Transistors as Detectors of THz Radiation
    Autorzy:
    Łusakowski, J.
    Knap, W.
    Kamińska, E.
    Piotrowska, A.
    Gavrilenko, V.
    Powiązania:
    https://bibliotekanauki.pl/articles/2035755.pdf
    Data publikacji:
    2003-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.30.+q
    73.61.Ey
    Opis:
    Magnetotransport characterisation of field effect transistors processed on GaAs/GaAlAs heterostructure was done at 4.2 K for magnetic fields (B) up to 7 T. Three field effect transistors were processed on a single dice and differed by the length (L) of the gate. Electron mobility (μ) in field effect transistors was estimated from dependence of transistor's conductivity vs. B. The results show a decrease inμ with decreasing L that suggests that scattering by edges of the gated part of a transistor limits the electron mobility. Quality factor (Q) of transistors as resonant detectors of THz radiation was calculated. A high value of Q shows that such field effect transistors with sub-micron L are promising devices that can operate at THz frequencies.
    Źródło:
    Acta Physica Polonica A; 2003, 103, 6; 545-551
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    THz Time Domain Spectroscopy of Thin Gold Layers on GaAs
    Autorzy:
    Szczytko, J.
    Adomavicius, R.
    Papis, E.
    Barańska, A.
    Wawro, A.
    Krotkus, A.
    Piętka, B.
    Łusakowski, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1417930.pdf
    Data publikacji:
    2012-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.66.Bz
    78.68.+m
    Opis:
    Thin layers of Au with the thickness of several nanometers were prepared on a semi-insulating GaAs substrate. The layers' thickness was determined by ellipsometry. THz time-domain spectroscopy was applied to determine a complex index of refraction of thin Au layers. The obtained results allow for a more precise modeling of the performance of semiconductor devices at THz frequencies.
    Źródło:
    Acta Physica Polonica A; 2012, 122, 6; 1118-1120
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Non-Ohmic Conductivity of High Resistivity CdTe
    Autorzy:
    Łusakowski, J.
    Szczytkowski, J.
    Szadkowski, K.
    Kamińska, E.
    Piotrowska, A.
    Karczewski, G.
    Wojtowicz, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/1933850.pdf
    Data publikacji:
    1995-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.80.-r
    Opis:
    Conductivity measurements were carried out at room temperature on samples of nominally undoped Bridgman, bulk crystals and MBE-grown layers of CdTe. The samples were equipped with indium contacts which made it possible to determine the voltage distribution along the path of the current flow. The results show that for both types of CdTe almost all of the applied voltage drops in the vicinity of the positively biased contact. The resistance of the samples was shown not to depend on the distance between the pads. The results agree with predictions of model of current injection into semiconductors with deep traps.
    Źródło:
    Acta Physica Polonica A; 1995, 88, 4; 803-806
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Electrical and Structural Properties of Ohmic Contacts to n-Type and High Resistivity CdTe
    Autorzy:
    Kamińska, E.
    Piotrowska, A.
    Guziewicz, M.
    Gierlotka, S.
    Papis, E.
    Łusakowski, J.
    Szadkowski, K.
    Kwiatkowski, S.
    Dietl, T.
    Grabecki, G.
    Jaroszyński, J.
    Karczewski, G.
    Zakrzewski, A. K.
    Powiązania:
    https://bibliotekanauki.pl/articles/1873052.pdf
    Data publikacji:
    1995-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.40.Ns
    Opis:
    The interaction between CdTe and In during the formation of an ohmic contact has been investigated. Emphasis is placed on the study of the effect of thermally induced sublimation of cadmium on electrical properties of contacts. Presented results prove the effectiveness of cap annealing and rapid thermal processing in fabrication of improved ohmic contacts with limited Cd losses during the contacting procedure.
    Źródło:
    Acta Physica Polonica A; 1995, 87, 2; 411-414
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Terahertz Detection by the Entire Channel of High Electron Mobility Transistors
    Autorzy:
    Sakowicz, M.
    Łusakowski, J.
    Karpierz, K.
    Knap, W.
    Grynberg, M.
    Köhler, K.
    Valusis, G.
    Gołaszewska, K.
    Kamińska, E.
    Piotrowska, A.
    Caban, P.
    Strupiński, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1811985.pdf
    Data publikacji:
    2008-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.75.+a
    78.20.Ls
    85.30.Tv
    07.57.Kp
    Opis:
    GaAs/AlGaAs and GaN/AlGaN high electron mobility transistors were used as detectors of THz electromagnetic radiation at liquid helium temperatures. Application of high magnetic fields led to the Shubnikov-de Haas oscillations of the detection signal. Measurements carried out with a simultaneous modulation of the intensity of the incident THz beam and the transistor gate voltage showed that the detection signal is determined by the electron plasma both in the gated and ungated parts of the transistor channel. This result is of importance for understanding the physical mechanism of the detection in high electron mobility transistors and for development of a proper theoretical description of this process.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 5; 1343-1348
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-9 z 9

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