Temat: Hi - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: (Eu,Gd)Te - MBE Growth and Characterization
Autorzy:: Dziawa, P.
Taliashvili, B.
Domuchowski, W.
Łusakowska, E.
Arciszewska, M.
Demchenko, I.
Dobrowolski, W.
Dybko, K.
Fedorych, O. M.
Nadolny, A. J.
Osinniy, V.
Petrouchyk, A.
Story, T.
Powiązania:: https://bibliotekanauki.pl/articles/2038228.pdf
Data publikacji:: 2004-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 75.50.Pp
81.15.Hi
Opis:: Monocrystalline thin layers of (Eu,Gd)Te, n-type ferromagnetic semiconductor, were grown by molecular beam epitaxy technique on BaF$\text{}_{2}$ (111) substrates. Reflection high-energy electron diffraction, X-ray diffraction, and atomic force microscopy characterization proved epitaxial mode of growth and high crystal quality of the layers. Magnetic susceptibility and magnetic resonance measurements showed that in (Eu,Gd)Te layers ferromagnetic transition takes place at about 13 K. Electrical characterization carried out by the Hall effect and resistivity measurements revealed very high electron concentration of 10$\text{}^{20}$~cm$\text{}^{-3}$ and sharp maximum of resistivity at transition temperature.
Źródło:: Acta Physica Polonica A; 2004, 106, 2; 215-221
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Ferromagnetic Transition in $Ge_{1-x}Mn_{x}Te$ Layers
Autorzy:: Knoff, W.
Domukhovski, V.
Dybko, K.
Dziawa, P.
Jakieła, R.
Łusakowska, E.
Reszka, A.
Świątek, K.
Taliashvili, B.
Story, T.
Szałowski, K.
Balcerzak, T.
Powiązania:: https://bibliotekanauki.pl/articles/1791343.pdf
Data publikacji:: 2009-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 75.50.Pp
75.30.Et
81.15.Hi
Opis:: Ferromagnetic transition temperature in thin layers of diluted magnetic (semimagnetic) semiconductor $Ge_{1-x}Mn_{x}Te$ was studied experimentally by SQUID magnetometry method and analyzed theoretically for a model Ising-type diluted magnetic system with Ruderman-Kittel-Kasuya-Yosida indirect exchange interaction. The key features of the experimentally observed dependence of the Curie temperature on Mn content (x ≤ 0.12) and conducting hole concentration p = (1-10) × $10^{21} cm^{-3}$ were reproduced theoretically for realistic valence band and crystal lattice parameters of p-$Ge_{1-x}Mn_{x}Te$ taking into account short carrier mean free path encountered in this material and Ruderman-Kittel-Kasuya-Yosida mechanism with both delta-like and diffused character of spatial dependence of the exchange coupling between magnetic ions and free carriers.
Źródło:: Acta Physica Polonica A; 2009, 116, 5; 904-906
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Solid Phase Epitaxy of Ferromagnetic MnAs Layer and Quantum Dots on Annealed GaMnAs
Autorzy:: Sadowski, J.
Kanski, J.
Adell, M.
Domagała, J. Z.
Janik, E.
Łusakowska, E.
Brucas, R.
Hanson, M.
Powiązania:: https://bibliotekanauki.pl/articles/2044534.pdf
Data publikacji:: 2005-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 81.10.Jt
81.15.Hi
68.65.Hb
68.37.Ps
Opis:: We show that post growth annealing of GaMnAs under As capping at temperatures in the range of 180-210ºC leads to significant surface modifications. Depending on GaMnAs layer thickness and composition, we obtain either a smooth continuous reacted (MnAs) surface layer or 3D islands (quantum dots). The surface modifications are due to a solid phase epitaxial process, in which Mn interstitials diffusing to the GaMnAs surface are bound with the As.
Źródło:: Acta Physica Polonica A; 2005, 108, 5; 851-858
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Influence of Substrate on Crystallographic Quality of AlGaN/GaN HEMT Structures Grown by Plasma-Assisted MBE
Autorzy:: Wierzbicka, A.
Żytkiewicz, Z.
Sobańska, M.
Kłosek, K.
Łusakowska, E.
Powiązania:: https://bibliotekanauki.pl/articles/1431598.pdf
Data publikacji:: 2012-04
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.05.cp
61.05.cm
81.15.Hi
68.55.-a
Opis:: Results of characterization of AlGaN/GaN high electron mobility transistor (HEMT) structures grown by plasma-assisted molecular beam epitaxy (PAMBE) are reported. High resolution X-ray diffraction (HRXRD) and X-ray reflectivity (XRR) were applied to show that structural properties of the AlGaN/GaN layers strongly depend on the substrate used for growth. It has been found that an additional 10 μm thick HVPE GaN layer grown on a commercial GaN/sapphire substrate significantly improves structural quality of AlGaN layer. However, the best structural parameters have been obtained for the HEMT sample grown on free-standing HVPE bulk GaN substrate.
Źródło:: Acta Physica Polonica A; 2012, 121, 4; 899-902
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Informacja