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Wyszukujesz frazę "Kac, S." wg kryterium: Autor


Wyświetlanie 1-2 z 2
Tytuł:
Growth and Characterisation of Pulsed-Laser Deposited Tin Thin Films on Cube-Textured Copper at Different Temperatures
Autorzy:
Szwachta, G.
Gajewska, M.
Kąc, S.
Powiązania:
https://bibliotekanauki.pl/articles/352365.pdf
Data publikacji:
2016
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
thin films
coated conductors
deposition
PLD
microstructure
Opis:
High-quality titanium nitride thin films have been grown on a cube-textured copper surface via pulsed laser deposition. The growth of TiN thin films has been very sensitive to pre-treatment procedure and substrate temperature. It is difficult to grow heteroexpitaxial TiN films directly on copper tape due to large differences in lattice constants, thermal expansion coefficients of the two materials as well as polycrystalline structure of substrate. The X-Ray diffraction measurement revealed presence of high peaks belonged to TiN(200) and TiN(111) thin films, depending on used etcher of copper surface. The electron diffraction patterns of TiN(200)/Cu films confirmed the single-crystal nature of the films with cube-on-cube epitaxy. The high-resolution microscopy on our films revealed sharp interfaces between copper and titanium nitride with no presence of interfacial reaction.
Źródło:
Archives of Metallurgy and Materials; 2016, 61, 2B; 1031-1038
1733-3490
Pojawia się w:
Archives of Metallurgy and Materials
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Morphology and Structure of the Erbium Stabilized Bismuth Oxide Thin Films Deposited by PLD Technique
Autorzy:
Kąc, S.
Szwachta, G.
Cieniek, Ł.
Moskalewicz, T.
Powiązania:
https://bibliotekanauki.pl/articles/356362.pdf
Data publikacji:
2019
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
Pulsed Laser Deposition
thin films
bismuth oxide
surface topography
Opis:
The aim of the work was to obtain thin bismuth oxide films containing, at room temperature, the Bi1,5Er0,5O3 phase. This phase corresponds to the structure of the high-temperature δ-Bi2O3 phase, in pure bismuth oxide, characterized by the highest ionic conductivity of all known solid state ionic conductors. The high-temperature δ-Bi2O3 phase with the face centered cubic structure, in pure bismuth oxide, occurs only at temperature above 730°C. Stabilization of the δ-Bi2O3 phase at room temperature was achieved by an addition of the erbium together with the employ-ment of the Pulsed Laser Deposition (PLD) technique. The influence of an amount of Er alloying and the film thickness on surface morphology, microstructure, phase composition of thin films were investigated. The velocity of deposition of thin layers of bismuth stabilized with erbium in the PLD process using the Nd: YAG laser was about 0.5 nm/s.The investigation results of erbium doped bismuth oxide thin films deposited onto (0001) oriented Al2O3 monocrystalline substrate are presented. Thin films of uniform thickness, without cracks, and porosity were obtained. All deposited thin films (regardless of the film thickness or erbia (Er2O3) content) exhibited a columnar structure. In films stabilized with erbium, up to approx. 250 nm thickness, the columns have a diameter at the base from 25 to 75 nm. The columns densely and tightly fill the entire volume of the films. With increasing of the film thickness increases, porosity also significantly increases. In thin layers containing from 20 to 30 mole % Er2O3 the main identified phase at room temperature is Bi1,5Er0,5O3. It is similar to the defective fluorite-type structure, and belongs to the Fm-3m space group. This phase corresponds to the structure of the high-temperature δ-Bi2O3 phase in pure bismuth oxide.
Źródło:
Archives of Metallurgy and Materials; 2019, 64, 3; 969-974
1733-3490
Pojawia się w:
Archives of Metallurgy and Materials
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-2 z 2

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