Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

Wyszukujesz frazę "Chmielewski, J.M." wg kryterium: Autor


Wyświetlanie 1-2 z 2
Tytuł:
Characterization of nanostructured bulk cobalt triantimonide doped with tellurium and indium prepared by pulsed plasma in liquid method
Autorzy:
Zybała, R.
Schmidt, M.
Kaszyca, K.
Chmielewski, M.
Kruszewski, M. J.
Jasiński, M.
Rajska, M.
Ciupiński, Ł.
Powiązania:
https://bibliotekanauki.pl/articles/200831.pdf
Data publikacji:
2020
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
thermoelectric materials
nanostructured materials
skutterudite
energy harvesting
spark plasma sintering
Opis:
One of the ways to decrease thermal conductivity is nano structurization. Cobalt triantimonide (CoSb3) samples with added indium or tellurium were prepared by the direct fusion technique from high purity elements. Ingots were pulverized and re-compacted to form electrodes. Then, the pulsed plasma in liquid (PPL) method was applied. All materials were consolidated using rapid spark plasma sintering (SPS). For the analysis, methods such as X-ray diffraction (XRD), scanning electron microscopy (SEM) and scanning transmission electron microscopy (STEM) with a laser flash apparatus (LFA) were used. For density measurement, the Archimedes’ method was used. Electrical conductivity was measured using a standard four-wire method. The Seebeck coefficient was calculated to form measured Seebeck voltage in the sample placed in a temperature gradient. The preparation method allowed for obtaining CoSb3 nanomaterial with significantly lower thermal conductivity (10 Wm–1K–1 for pure CoSb3 and 3 Wm–1K–1 for the nanostructured sample in room temperature (RT)). The size of crystallites (from SEM observations) in the powders prepared was about 20 nm, joined into larger agglomerates. The Seebeck coefficient, α, was about –200μVK–1 in the case of both dopants, In and Te, in microsized material and about −400 μK−1 for the nanomaterial at RT. For pure CoSb3 , α was about 150 μVK−1 and it stood at −50 μVK−1 for nanomaterial at RT. In bulk nanomaterial samples, due to a decrease in electrical conductivity and inversion of the Seebeck coefficient, there was no increase in ZT values and the ZT for the nanosized material was below 0.02 in the measured temperature range, while for microsized In-doped sample it reached maximum ZT = 0.7 in (600K).
Źródło:
Bulletin of the Polish Academy of Sciences. Technical Sciences; 2020, 68, 1; 125-134
0239-7528
Pojawia się w:
Bulletin of the Polish Academy of Sciences. Technical Sciences
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Synthesis and Characterization of Antimony Telluride for Thermoelectric and Optoelectronic Applications
Autorzy:
Zybała, R.
Mars, K.
Mikuła, A.
Bogusławski, J.
Soboń, G.
Sotor, J.
Schmidt, M.
Kaszyca, K.
Chmielewski, M.
Ciupiński, L.
Pietrzak, K.
Powiązania:
https://bibliotekanauki.pl/articles/352428.pdf
Data publikacji:
2017
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
antimony telluride
thermoelectric materials
thin films
PVD magnetron sputtering
topological insulator
Opis:
Antimony telluride (Sb2 Te3 ) is an intermetallic compound crystallizing in a hexagonal lattice with R-3m space group. It creates a c lose packed structure of an ABCABC type. As intrinsic semiconductor characterized by excellent electrical properties, Sb2 Te3 is widely used as a low-temperature thermoelectric material. At the same time, due to unusual properties (strictly connected with the structure), antimony telluride exhibits nonlinear optical properties, including saturable absorption. Nanostructurization, elemental doping and possibilities of synthesis Sb2 Te3 in various forms (polycrystalline, single crystal or thin film) are the most promising methods for improving thermoelectric properties of Sb2Te3.Applications of Sb2 Te3 in optical devices (e.g. nonlinear modulator, in particular saturable absorbers for ultrafast lasers) are also interesting. The antimony telluride in form of bulk polycrystals and layers for thermoelectric and optoelectronic applications respectively were used. For optical applications thin layers of the material were formed and studied. Synthesis and structural characterization of Sb2 Te3 were also presented here. The anisotropy (packed structure) and its influence on thermoelectric properties have been performed. Furthermore, preparation and characterization of Sb2 Te3 thin films for optical uses have been also made.
Źródło:
Archives of Metallurgy and Materials; 2017, 62, 2B; 1067-1070
1733-3490
Pojawia się w:
Archives of Metallurgy and Materials
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-2 z 2

    Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies