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    Wyświetlanie 1-3 z 3
    Tytuł:
    Pairs of successes in Bernoulli trials and a new n-estimator for the binomial distribution
    Autorzy:
    Kühne, Wolfgang
    Neumann, Peter
    Stoyan, Dietrich
    Stoyan, Helmut
    Powiązania:
    https://bibliotekanauki.pl/articles/1340510.pdf
    Data publikacji:
    1994
    Wydawca:
    Polska Akademia Nauk. Instytut Matematyczny PAN
    Tematy:
    n-estimator
    simulation
    silicon wafer
    Markov chain
    binomial distribution
    Opis:
    The problem of estimating the number, n, of trials, given a sequence of k independent success counts obtained by replicating the n-trial experiment is reconsidered in this paper. In contrast to existing methods it is assumed here that more information than usual is available: not only the numbers of successes are given but also the number of pairs of consecutive successes. This assumption is realistic in a class of problems of spatial statistics. There typically k = 1, in which case the classical estimators cannot be used. The quality of the new estimator is analysed and, for k > 1, compared with that of a classical n-estimator. The theoretical basis for this is the distribution of the number of success pairs in Bernoulli trials, which can be determined by an elementary Markov chain argument.
    Źródło:
    Applicationes Mathematicae; 1993-1995, 22, 3; 331-337
    1233-7234
    Pojawia się w:
    Applicationes Mathematicae
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Reduction of defects in the lapping process of the silicon wafer manufacturing: the Six Sigma application
    Autorzy:
    Sharma, Mithun
    Sahni, Sanjeev P.
    Sharma, Shilpi
    Powiązania:
    https://bibliotekanauki.pl/articles/125540.pdf
    Data publikacji:
    2019
    Wydawca:
    Politechnika Białostocka. Oficyna Wydawnicza Politechniki Białostockiej
    Tematy:
    Six Sigma
    quality
    silicon wafer
    lapping
    quality control
    total thickness variation
    wafer manufacturing
    jakość
    płytka krzemowa
    docieranie
    kontrola jakości
    całkowita zmiana grubości
    produkcja płytek
    Opis:
    Aiming to reduce flatness (Total Thickness Variation, TTV) defects in the lapping process of the silicon wafer manufacturing, it is crucial to understand and eliminate the root cause(s). Financial losses resulting from TTV defects make the lapping process unsustainable. DMAIC (Define, Measure, Analyse, Improve and Control), which is a Six Sigma methodology, was implemented to improve the quality of the silicon wafer manufacturing process. The study design and the choice of procedures were contingent on customer requirements and customised to ensure maximum satisfaction; which is the underlying principle of the rigorous, statistical technique of Six Sigma. Previously unknown causes of high TTV reject rates were identified, and a massive reduction in the TTV reject rate was achieved (from 4.43% to 0.02%). Also, the lapping process capability (Ppk) increased to 3.87 (beyond the required standard of 1.67), suggesting sustainable long-term stability. Control procedures were also effectively implemented using the techniques of poka yoke and control charts. This paper explores the utility of Six Sigma, a quality management technique, to improve the quality of a process used in the semiconductor industry. The application of the Six Sigma methodology in the current project provides an example of the root cause investigation methodology that can be adopted for similar processes or industries. Some of the statistical tools and techniques were used for the first time in this project, thereby providing new analysis and quality improvement platform for the future. The article offers a deeper understanding of the factors that impact on the silicon wafer flatness in the lapping process. It also highlights the benefits of using a structured problem-solving methodology like Six Sigma.
    Źródło:
    Engineering Management in Production and Services; 2019, 11, 2; 87-105
    2543-6597
    2543-912X
    Pojawia się w:
    Engineering Management in Production and Services
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Correction of the electric resistivity distribution of Si wafers using selective neutron transmutation doping (SNTD) in MARIA nuclear research reactor
    Autorzy:
    Tarchalski, M.
    Kordyasz, A. J.
    Pytel, K.
    Dorosz, D.
    Powiązania:
    https://bibliotekanauki.pl/articles/146646.pdf
    Data publikacji:
    2012
    Wydawca:
    Instytut Chemii i Techniki Jądrowej
    Tematy:
    silicon wafer
    thermal neutron doping
    silicon resistivity homogeneity
    silicon resistivity heterogeneity
    neutron transmutation doping (NTD)
    selective neutron transmutation doping (SNTD)
    MARIA nuclear research reactor
    Opis:
    The result of the electric resistivity distribution modification in silicon wafers, by means of selective neutron transmutation doping (SNTD) method in the MARIA nuclear research reactor at Świerk/Otwock (Poland) is presented. Silicon wafer doping system has been fully designed for the MARIA reactor, where irradiation took place. The silicon wafer resistivity distribution after SNTD has been measured by the capacity voltage (C-V) method. In this article we show first results of this correction technique. The result of the present investigation is that the planar resolution of the correction process is about 4 mm. It is the full width at half maximum (FWHM) of the resistivity distribution produced by thermal neutrons irradiation of Si wafer through a 3 mm hole in the Cd-mask.
    Źródło:
    Nukleonika; 2012, 57, 3; 363-367
    0029-5922
    1508-5791
    Pojawia się w:
    Nukleonika
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-3 z 3

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