Temat: SiC MOSFET - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Comparison of 4H-SiC and 6H-SiC MOSFET I-V characteristics simulated with Silvaco Atlas and Crosslight Apsys
Autorzy:: Stęszewski, J.
Jakubowski, A.
Korwin-Pawlowski, M. L.
Powiązania:: https://bibliotekanauki.pl/articles/308627.pdf
Data publikacji:: 2007
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: silicon carbide
SiC MOSFET
4H-SiC
6H-SiC
Crosslight Apsys
Silvaco Atlas
Opis:: A set of physical models describing silicon carbide with fitting parameters is proposed. The theoretical I-V output and transfer characteristics and parameters of MOS transistors were calculated using Silvaco Atlas and Crosslight Apsys semiconductor device simulation environments.
Źródło:: Journal of Telecommunications and Information Technology; 2007, 3; 93-95
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Multiparameter reliability model for SiC power MOSFET subjected to repetitive thermomechanical load
Autorzy:: Bąba, Sebastian
Powiązania:: https://bibliotekanauki.pl/articles/2173625.pdf
Data publikacji:: 2021
Wydawca:: Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:: reliability engineering
reliability modelling
power MOSFET
SiC
silicon carbide
inżynieria niezawodności
modelowanie niezawodności
węglik krzemu
tranzystor mocy MOSFET
Opis:: The main drawback of any Design for Reliability methodology is lack of easy accessible reliability models, prepared individually for each critical component. In this paper, a reliability model for SiC power MOSFET in SOT – 227 B housing, subjected to power cycling, is presented. Discussion covers preparation of Accelerated Lifetime Test required to develop such reliability model, analysis of semiconductor degradation progress, samples post-failure analysis and identification of reliability model parameters. Such model may be further used for failure prognostics or useful lifetime estimation of High Performance Power Supplies.
Źródło:: Bulletin of the Polish Academy of Sciences. Technical Sciences; 2021, 69, 3; art. no. e137386
0239-7528
Pojawia się w:: Bulletin of the Polish Academy of Sciences. Technical Sciences
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Multiparameter reliability model for SiC power MOSFET subjected to repetitive thermomechanical load
Autorzy:: Bąba, Sebastian
Powiązania:: https://bibliotekanauki.pl/articles/2090738.pdf
Data publikacji:: 2021
Wydawca:: Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:: reliability engineering
reliability modelling
power MOSFET
SiC
silicon carbide
inżynieria niezawodności
modelowanie niezawodności
węglik krzemu
tranzystor mocy MOSFET
Opis:: The main drawback of any Design for Reliability methodology is lack of easy accessible reliability models, prepared individually for each critical component. In this paper, a reliability model for SiC power MOSFET in SOT – 227 B housing, subjected to power cycling, is presented. Discussion covers preparation of Accelerated Lifetime Test required to develop such reliability model, analysis of semiconductor degradation progress, samples post-failure analysis and identification of reliability model parameters. Such model may be further used for failure prognostics or useful lifetime estimation of High Performance Power Supplies.
Źródło:: Bulletin of the Polish Academy of Sciences. Technical Sciences; 2021, 69, 3; e137386, 1--8
0239-7528
Pojawia się w:: Bulletin of the Polish Academy of Sciences. Technical Sciences
Dostawca treści:: Biblioteka Nauki

Artykuł

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