- Tytuł:
- Multiparameter reliability model for SiC power MOSFET subjected to repetitive thermomechanical load
- Autorzy:
- Bąba, Sebastian
- Powiązania:
- https://bibliotekanauki.pl/articles/2173625.pdf
- Data publikacji:
- 2021
- Wydawca:
- Polska Akademia Nauk. Czytelnia Czasopism PAN
- Tematy:
-
reliability engineering
reliability modelling
power MOSFET
SiC
silicon carbide
inżynieria niezawodności
modelowanie niezawodności
węglik krzemu
tranzystor mocy MOSFET - Opis:
- The main drawback of any Design for Reliability methodology is lack of easy accessible reliability models, prepared individually for each critical component. In this paper, a reliability model for SiC power MOSFET in SOT – 227 B housing, subjected to power cycling, is presented. Discussion covers preparation of Accelerated Lifetime Test required to develop such reliability model, analysis of semiconductor degradation progress, samples post-failure analysis and identification of reliability model parameters. Such model may be further used for failure prognostics or useful lifetime estimation of High Performance Power Supplies.
- Źródło:
-
Bulletin of the Polish Academy of Sciences. Technical Sciences; 2021, 69, 3; art. no. e137386
0239-7528 - Pojawia się w:
- Bulletin of the Polish Academy of Sciences. Technical Sciences
- Dostawca treści:
- Biblioteka Nauki
Artykuł