- Tytuł:
- Performance Comparison of Stacked Dual-Metal Gate Engineered Cylindrical Surrounding Double-Gate MOSFET
- Autorzy:
-
Dargar, Abha
Srivastava, Viranjay M. - Powiązania:
- https://bibliotekanauki.pl/articles/1844602.pdf
- Data publikacji:
- 2021
- Wydawca:
- Polska Akademia Nauk. Czytelnia Czasopism PAN
- Tematy:
-
short-channel effects
metal oxide semiconductor
transistor
cylindrical surrounding double-gate
dual-material gate
microelectronics
nanotechnology - Opis:
- In this research work, a Cylindrical Surrounding Double-Gate (CSDG) MOSFET design in a stacked-Dual Metal Gate (DMG) architecture has been proposed to incorporate the ability of gate metal variation in channel field formation. Further, the internal gate's threshold voltage (VTH1) could be reduced compared to the external gate (VTH2) by arranging the gate metal work-function in Double Gate devices. Therefore, a device design of CSDG MOSFET has been realized to instigate the effect of Dual Metal Gate (DMG) stack architecture in the CSDG device. The comparison of device simulation shown optimized electric field and surface potential profile. The gradual decrease of metal work function towards the drain also improves the Drain Induced Barrier Lowering (DIBL) and subthreshold characteristics. The physics-based analysis of gate stack CSDG MOSFET that operates in saturation involving the analogy of cylindrical dual metal gates has been considered to evaluate the performance improvements. The insights obtained from the results using the gate-stack dual metal structure of CSDG are quite promising, which can serve as a guide to further reduce the threshold voltage roll-off, suppress the Hot Carrier Effects (HCEs) and Short Channel Effects (SCEs).
- Źródło:
-
International Journal of Electronics and Telecommunications; 2021, 67, 1; 29-34
2300-1933 - Pojawia się w:
- International Journal of Electronics and Telecommunications
- Dostawca treści:
- Biblioteka Nauki
Artykuł