Autor: Górecki, Paweł - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Application of the Averaged Model of the Diode-transistor Switch for Modelling Characteristics of a Boost Converter with an IGBT
Autorzy:: Górecki, Paweł
Powiązania:: https://bibliotekanauki.pl/articles/226814.pdf
Data publikacji:: 2020
Wydawca:: Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:: DC-DC converter
IGBT
boost converter
averaged model
diode-transistor switch
modelling
SPICE
Opis:: DC-DC converters are popular switch-mode electronic circuits used in power supply systems of many electronic devices. Designing such converters requires reliable computation methods and models of components contained in these converters, allowing for accurate and fast computations of their characteristics. In the paper, a new averaged model of a diode-transistor switch containing an IGBT is proposed. The form of the developed model is presented. Its accuracy is verified by comparing the computed characteristics of the boost converter with the characteristics computed in SPICE using a transient analysis and literature models of a diode and an IGBT. The obtained results of computations proved the usefulness of the proposed model.
Źródło:: International Journal of Electronics and Telecommunications; 2020, 66, 3; 555-560
2300-1933
Pojawia się w:: International Journal of Electronics and Telecommunications
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Compact Thermal Models of Semiconductor Devices : a Review
Autorzy:: Górecki, Krzysztof
Zarębski, Janusz
Górecki, Paweł
Ptak, Przemysław
Powiązania:: https://bibliotekanauki.pl/articles/226308.pdf
Data publikacji:: 2019
Wydawca:: Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:: compact thermal models
thermal phenomena
semiconductor devices
modelling
Opis:: In the paper the problem of modelling thermal properties of semiconductor devices with the use of compact models is presented. This class of models is defined and their development over the past dozens of years is described. Possibilities of modelling thermal phenomena both in discrete semiconductor devices, monolithic integrated circuits, power modules and selected electronic circuits are presented. The problem of the usefulness range of compact thermal models in the analysis of electronic elements and circuits is discussed on the basis of investigations performed in Gdynia Maritime University.
Źródło:: International Journal of Electronics and Telecommunications; 2019, 65, 2; 151-158
2300-1933
Pojawia się w:: International Journal of Electronics and Telecommunications
Dostawca treści:: Biblioteka Nauki

Artykuł

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