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Wyszukujesz frazę "Stadler, A." wg kryterium: Autor


Wyświetlanie 1-3 z 3
Tytuł:
Noise Measurements Of Resistors With The Use Of Dual-Phase Virtual Lock-In Technique
Autorzy:
Stadler, A. W.
Kolek, A.
Zawiślak, Z.
Dziedzic, A.
Powiązania:
https://bibliotekanauki.pl/articles/221468.pdf
Data publikacji:
2015
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
1/f noise
polymer thick-film resistor
low-frequency noise measurements
virtual lock-in
Opis:
Measurement of low-frequency noise properties of modern electronic components is a very demanding challenge due to the low magnitude of a noise signal and the limit of a dissipated power. In such a case, an ac technique with a lock-in amplifier or the use of a low-noise transformer as the first stage in the signal path are common approaches. A software dual-phase virtual lock-in (VLI) technique has been developed and tested in low-frequency noise studies of electronic components. VLI means that phase-sensitive detection is processed by a software layer rather than by an expensive hardware lock-in amplifier. The VLI method has been tested in exploration of noise in polymer thick-film resistors. Analysis of the obtained noise spectra of voltage fluctuations confirmed that the 1/f noise caused by resistance fluctuations is the dominant one. The calculated value of the parameter describing the noise intensity of a resistive material, C= 1·10−21m3, is consistent with that obtained with the use of a dc method. On the other hand, it has been observed that the spectra of (excitation independent) resistance noise contain a 1/f component whose intensity depends on the excitation frequency. The phenomenon has been explained by means of noise suppression by impedances of the measurement circuit, giving an excellent agreement with the experimental data.
Źródło:
Metrology and Measurement Systems; 2015, 22, 4; 503-512
0860-8229
Pojawia się w:
Metrology and Measurement Systems
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Noise properties of thin-film Ni-P resistors embedded in printed circuit boards
Autorzy:
Stadler, A. W.
Zawiślak, Z.
Stęplewski, W.
Dziedzic, A.
Powiązania:
https://bibliotekanauki.pl/articles/201274.pdf
Data publikacji:
2013
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
thin-film resistors
Ni-P foil
1/f noise
low-frequency noise measurements
Opis:
Noise studies of planar thin-film Ni-P resistors made in/on Printed Circuit Boards, both covered with two different types of cladding or uncladded have been described. The resistors have been made of the resistive-conductive-material (Ohmega-Ply©) of 100 Ώ/sq. Noise of the selected pairs of samples has been measured in the DC resistance bridge with a transformer as the first stage in a signal path. 1/f noise caused by resistance fluctuations has been found to be the main noise component. Parameters describing noise properties of the resistors have been calculated and then compared with the parameters of other previously studied thin- and thick-film resistive materials.
Źródło:
Bulletin of the Polish Academy of Sciences. Technical Sciences; 2013, 61, 3; 731-735
0239-7528
Pojawia się w:
Bulletin of the Polish Academy of Sciences. Technical Sciences
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Noise spectroscopy of resistive components at elevated temperature
Autorzy:
Stadler, A.W.
Zawiślak, Z.
Dziedzic, A.
Nowak, D.
Powiązania:
https://bibliotekanauki.pl/articles/221348.pdf
Data publikacji:
2014
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
noise spectroscopy
low-frequency noise
resistance noise
low-frequency noise measurements
thick-film resistors
Opis:
Studies of electrical properties, including noise properties, of thick-film resistors prepared from various resistive and conductive materials on LTCC substrates have been described. Experiments have been carried out in the temperature range from 300 K up to 650 K using two methods, i.e. measuring (i) spectra of voltage fluctuations observed on the studied samples and (ii) the current noise index by a standard meter, both at constant temperature and during a temperature sweep with a slow rate. The 1/f noise component caused by resistance fluctuations occurred to be dominant in the entire range of temperature. The dependence of the noise intensity on temperature revealed that a temperature change from 300 K to 650 K causes a rise in magnitude of the noise intensity approximately one order of magnitude. Using the experimental data, the parameters describing noise properties of the used materials have been calculated and compared to the properties of other previously studied thick-film materials.
Źródło:
Metrology and Measurement Systems; 2014, 21, 1; 15-26
0860-8229
Pojawia się w:
Metrology and Measurement Systems
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-3 z 3

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