Temat: ion temperature - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: High - temperature oxidation resistance in yttrium implanted stainless steel
Autorzy:: Barlak, M.
Piekoszewski, J.
Werner, Z.
Sartowska, B.
Waliś, L.
Starosta, W.
Kierzek, J.
Kowalska, E.
Wilhelm, R. A.
Pochrybniak, C.
Woźnica, M.
Powiązania:: https://bibliotekanauki.pl/articles/146785.pdf
Data publikacji:: 2012
Wydawca:: Instytut Chemii i Techniki Jądrowej
Tematy:: high-temperature oxidation resistance
ion implantation
yttrium
Opis:: Austenitic AISI 304, 316L and ferritic 430 stainless steels were implanted with yttrium to fluences ranging between 1 x 1015 and 5 x 1017 ions/cm2. The samples were subjected to oxidation in air at a temperature of 1000 centigrade for a period of 100 h and next examined by stereoscopic optical microscopy (OM), scanning electron microscopy (SEM), energy dispersive X-ray spectrometry (EDX) and Rutherford back scattering spectrometry (RBS). The results obtained with the use of ion implantation are discussed.
Źródło:: Nukleonika; 2012, 57, 4; 473-476
0029-5922
1508-5791
Pojawia się w:: Nukleonika
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: Recent development in ECR sources
Autorzy:: Bieth, C.
Kantas, S.
Sortais, P.
Kanjilal, D.
Rodrigues, G.
Powiązania:: https://bibliotekanauki.pl/articles/148676.pdf
Data publikacji:: 2003
Wydawca:: Instytut Chemii i Techniki Jądrowej
Tematy:: ion source
ECR source
superconducting coils
high temperature superconducting wires
high charge state ion source
ion implantation
Opis:: Recent developments and improvements on the ECR ion source family at PANTECHNIK S.A. are presented. A lot of work has been done in the Ion Implantation Technology with the MICROGAN IndustryŽ source: more than 3 mA have been produced on B1+, P1+ and few hundred žAe on charge state 3+, 4+. Three other developments are described in this paper: a) the construction of the first source using high temperature superconducting coils (30 K) PKSUSŽ - Space Cryomagnetics (UK), in collaboration with NSC (New Delhi); b) the construction of the PHOENIX ECR source (used in the “1+/n+” process for radioactive beam) for different laboratories; c) and the first results on PK 2.45 (a cheap source working at 2.45 GHz) able to produce high current of monocharged beam. We will also present some special products for beam acceleration and diagnosis.
Źródło:: Nukleonika; 2003, 48,suppl.2; 93-98
0029-5922
1508-5791
Pojawia się w:: Nukleonika
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 3.

Tytuł:: Crystal Lattice Damage and Recovery of Rare-Earth implanted Wide Bandgap Oxides
Autorzy:: Sarwar, Mahwish
Ratajczak, Renata
Ivanov, Vitalii
Mishra, Sushma
Turek, Marcin
Wierzbicka, Aleksandra
Woźniak, Wojciech
Guziewicz, Elżbieta
Powiązania:: https://bibliotekanauki.pl/articles/2204945.pdf
Data publikacji:: 2022
Wydawca:: Stowarzyszenie Inżynierów i Techników Mechaników Polskich
Tematy:: wide bandgap oxides
zinc oxide
gallium oxide
rare earth
ion implantation
Rutherford backscattering spectrometry
low temperature photoluminescence
Opis:: Rare earth (RE) elements are important for the optical tuning of wide bandgap oxides (WBO) such as β-Ga2O3 or ZnO, because β-Ga2O3:RE or ZnO:RE show narrow emission lines in the visible, ultra-violet and infra-red region. Ion implantation is an attractive method to introduce dopant into the crystal lattice with an extraordinary control of the dopant ion composition and location, but it creates the lattice damage, which may render the dopant optically inactive. In this research work, we investigate the post-implantation crystal lattice damage of two matrices of wide-bandgap oxides, β-Ga2O3 and ZnO, implanted with rare-earth (RE) to a fluence of 5 x 10^14, 1 x 10^15 and 3 x 10^15 atoms/cm^2, and post-growth annealed in Ar and O2 atmosphere, respectively. The effect of implantation and annealing on both crystal lattices was investigated by channeling Rutherford backscattering spectrometry (RBS/C) technique. The level of crystal lattice damage caused by implantation with the same RE fluences in the case of β-Ga2O3 seems to be higher than in the case of ZnO. Low temperature photoluminescence was used to investigate the optical activation of RE in both matrices after performed annealing.
Źródło:: Advances in Science and Technology. Research Journal; 2022, 16, 5; 147--154
2299-8624
Pojawia się w:: Advances in Science and Technology. Research Journal
Dostawca treści:: Biblioteka Nauki

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