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Wyszukujesz frazę "DC–DC converters" wg kryterium: Temat


Wyświetlanie 1-3 z 3
Tytuł:
Simulation of high-efficiency interleaved step-up DC-DC boost-flyback converter to use in photovoltaic system
Autorzy:
Tomaszuk, A.
Powiązania:
https://bibliotekanauki.pl/articles/378212.pdf
Data publikacji:
2014
Wydawca:
Politechnika Poznańska. Wydawnictwo Politechniki Poznańskiej
Tematy:
step-up DC-DC converters
high efficiency
photovoltaic systems
Opis:
In low-voltage photovoltaic (PV) systems high-efficiency high voltage gain step-up DC-DC converters are required as the interface between the PV panel and the load. Therefore overall performance of the PV system is essentially affected by the efficiency of step-up DC-DC converter itself. This paper presents the results of PSpice simulation of high-efficiency interleaved step-up DC-DC converter. The converter integrates boost and flyback topologies. Interleaved approach minimizes the current stress on the switches as well as allows reducing a sizes of the inductors but also decreases input current ripples. The other advantage of interleaving structure is flexibility of number of working phases extension. The number of working phases can be dynamically determined depending on the power requirements of the load. High efficiency assured by boost-flyback topology is achieved by the means of recycling the energy from input leakage inductance and relatively low voltage stress across the transistor switches which enables low drain-to-source resistance transistors application. The simulation carried out will present transient and performance characteristics of interleaved step-up DC-DC boost-flyback converter.
Źródło:
Poznan University of Technology Academic Journals. Electrical Engineering; 2014, 79; 97-104
1897-0737
Pojawia się w:
Poznan University of Technology Academic Journals. Electrical Engineering
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Review and comparison of high efficiency high power boost DC/DC converters for photovoltaic applications
Autorzy:
Dawidziuk, J.
Powiązania:
https://bibliotekanauki.pl/articles/200077.pdf
Data publikacji:
2011
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
boost DC/DC converters
high efficiency
high power
photovoltaic systems
renewable energy
Opis:
Recent environmental issues have accelerated the use of more efficient and energy saving technologies in renewable energy systems. High power high efficiency boost DC/DC converters for the use in photovoltaic, fuel cell systems are discussed in this paper from the viewpoint of power losses and efficiency. State of the art converters with switching frequency within the range of 25 kHz with IGBTs to 100 kHz with power MOSFETs and the highest efficiency close to 98%, depending on the load conditions, is considered. A comparison and discussion of the highest efficiency high power DC/DC boost converters is also presented in this paper.
Źródło:
Bulletin of the Polish Academy of Sciences. Technical Sciences; 2011, 59, 4; 499-506
0239-7528
Pojawia się w:
Bulletin of the Polish Academy of Sciences. Technical Sciences
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Design, Analysis and Comparison of Si- and GaN-Based DC-DC Wide-Input-Voltage-Range Buck-Boost Converters
Autorzy:
Koszel, Mikołaj
Grzejszczak, Piotr
Nowatkiewicz, Bartosz
Wolski, Kornel
Powiązania:
https://bibliotekanauki.pl/articles/1844528.pdf
Data publikacji:
2021
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
buck-boost
synchronous dc-dc converters
GaN
high efficiency
ultracapacitor
power losses
SEPIC
Ćuk
Opis:
The purpose of the article is a comparison between DC/DC topologies with a wide input voltage range. The research also explains how the implementation of GaN E-HEMT transistors influences the overall efficiency of the converter. The article presents a process of selection of the most efficient topology for stabilization of the battery storage voltage (9 V – 36 V) at the level of 24 V, which enables the usage of ultracapacitor energy storage in a wide range of applications, e.g., in automated electric vehicles. In order to choose the most suitable topology, simulation and laboratory research were conducted. The two most promising topologies were selected for verification in the experimental model. Each of the converters was constructed in two versions: with Si and with GaN E-HEMT transistors. The paper presents experimental research results that consist of precise power loss measurements and thermal analysis. The performance with an increased switching frequency of converters was also examined.
Źródło:
International Journal of Electronics and Telecommunications; 2021, 67, 3; 337-343
2300-1933
Pojawia się w:
International Journal of Electronics and Telecommunications
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-3 z 3

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