- Tytuł:
- Applying shallow nitrogen implantation from rf plasma for dual gate oxide technology
- Autorzy:
-
Bieniek, T.
Beck, R. B.
Jakubowski, A.
Głuszko, G.
Konarski, P.
Ćwil, M. - Powiązania:
- https://bibliotekanauki.pl/articles/308685.pdf
- Data publikacji:
- 2007
- Wydawca:
- Instytut Łączności - Państwowy Instytut Badawczy
- Tematy:
-
CMOS
dual gate oxide
gate stack
oxynitride
plasma implantation - Opis:
- The goal of this work was to study nitrogen implantation from plasma with the aim of applying it in dual gate oxide technology and to examine the influence of the rf power of plasma and that of oxidation type. The obtained structures were examined by means of ellipsometry, SIMS and electrical characterization methods.
- Źródło:
-
Journal of Telecommunications and Information Technology; 2007, 3; 3-8
1509-4553
1899-8852 - Pojawia się w:
- Journal of Telecommunications and Information Technology
- Dostawca treści:
- Biblioteka Nauki
Artykuł