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    Wyświetlanie 1-6 z 6
    Tytuł:
    Modelling of changes in the resistivity of semi-insulating materials
    Autorzy:
    Suproniuk, Marek
    Powiązania:
    https://bibliotekanauki.pl/articles/1849000.pdf
    Data publikacji:
    2021
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    resistivity
    semiconductor
    gallium phosphide
    silicon carbide
    Opis:
    Electrical properties of semiconductor materials depend on their defect structure. Point defects, impurities or admixture contained in a semiconductor material, strongly affect its properties and determine the performance parameters of devices made on its basis. The results of the currently used methods of examining the defect structure of semiconductor material are imprecise due to solution of ill-posed equations. These methods do not allow for determination of concentration of the defect centers examined. Improving the resolution of the obtained parameters of defect centers, determining their concentration and studying changes in the resistivity of semi-insulating materials can be carried out, among others, by modelling changes in the concentration of carriers in the conduction and valence bands. This method allows to determine how charge compensation in the material affects the changes in its resistivity. Calculations based on the Fermi-Dirac statistics can complement the experiment and serve as a prediction tool for identifying and characterizing defect centers. Using the material models (GaP, 4H-SiC) presented in the article, it is possible to calculate their resistivity for various concentrations of defect centers in the temperature range assumed by the experimenter. The models of semi-insulating materials presented in the article were built on the basis of results of testing parameters of defect centers with high-resolution photoinduced transient spectroscopy (HRPITS). The current research will allow the use of modelling to determine optimal parameters of semi-insulating semiconductor materials for use in photoconductive semiconductor switches (PCSS).
    Źródło:
    Metrology and Measurement Systems; 2021, 28, 3; 581-592
    0860-8229
    Pojawia się w:
    Metrology and Measurement Systems
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Modelling of changes in the resistivity of semi-insulating materials
    Autorzy:
    Suproniuk, Marek
    Powiązania:
    https://bibliotekanauki.pl/articles/1849019.pdf
    Data publikacji:
    2021
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    resistivity
    semiconductor
    gallium phosphide
    silicon carbide
    Opis:
    Electrical properties of semiconductor materials depend on their defect structure. Point defects, impurities or admixture contained in a semiconductor material, strongly affect its properties and determine the performance parameters of devices made on its basis. The results of the currently used methods of examining the defect structure of semiconductor material are imprecise due to solution of ill-posed equations. These methods do not allow for determination of concentration of the defect centers examined. Improving the resolution of the obtained parameters of defect centers, determining their concentration and studying changes in the resistivity of semi-insulating materials can be carried out, among others, by modelling changes in the concentration of carriers in the conduction and valence bands. This method allows to determine how charge compensation in the material affects the changes in its resistivity. Calculations based on the Fermi-Dirac statistics can complement the experiment and serve as a prediction tool for identifying and characterizing defect centers. Using the material models (GaP, 4H-SiC) presented in the article, it is possible to calculate their resistivity for various concentrations of defect centers in the temperature range assumed by the experimenter. The models of semi-insulating materials presented in the article were built on the basis of results of testing parameters of defect centers with high-resolution photoinduced transient spectroscopy (HRPITS). The current research will allow the use of modelling to determine optimal parameters of semi-insulating semiconductor materials for use in photoconductive semiconductor switches (PCSS).
    Źródło:
    Metrology and Measurement Systems; 2021, 28, 3; 581-592
    0860-8229
    Pojawia się w:
    Metrology and Measurement Systems
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Modelling of changes in the resistivity of semi-insulating materials
    Autorzy:
    Suproniuk, Marek
    Powiązania:
    https://bibliotekanauki.pl/articles/1849057.pdf
    Data publikacji:
    2021
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    resistivity
    semiconductor
    gallium phosphide
    silicon carbide
    Opis:
    Electrical properties of semiconductor materials depend on their defect structure. Point defects, impurities or admixture contained in a semiconductor material, strongly affect its properties and determine the performance parameters of devices made on its basis. The results of the currently used methods of examining the defect structure of semiconductor material are imprecise due to solution of ill-posed equations. These methods do not allow for determination of concentration of the defect centers examined. Improving the resolution of the obtained parameters of defect centers, determining their concentration and studying changes in the resistivity of semi-insulating materials can be carried out, among others, by modelling changes in the concentration of carriers in the conduction and valence bands. This method allows to determine how charge compensation in the material affects the changes in its resistivity. Calculations based on the Fermi-Dirac statistics can complement the experiment and serve as a prediction tool for identifying and characterizing defect centers. Using the material models (GaP, 4H–SiC) presented in the article, it is possible to calculatetheir resistivity for various concentrations of defect centers in the temperature range assumed by the experimenter. The models of semi-insulating materials presented in the article were built on the basis of results of testing parameters of defect centers with high-resolution photoinduced transient spectroscopy (HRPITS). The current research will allow the use of modelling to determine optimal parameters of semi-insulating semiconductor materials for use in photoconductive semiconductor switches (PCSS).
    Źródło:
    Metrology and Measurement Systems; 2021, 28, 3; 581-592
    0860-8229
    Pojawia się w:
    Metrology and Measurement Systems
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Comparison of photoconductive semiconductor switch parameters with selected switch devices in power systems
    Autorzy:
    Piwowarski, Karol
    Powiązania:
    https://bibliotekanauki.pl/articles/1818252.pdf
    Data publikacji:
    2020
    Wydawca:
    Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
    Tematy:
    electronic devices
    electric switch
    photoconductive semiconductor switches
    gallium phosphide
    Opis:
    Currently, work is underway to manufacture and find potential applications for a photoconductive semiconductor switch made of a semi-insulating material. The article analyzes the literature in terms of parameters and possibilities of using PCSS switches, as well as currently used switches in power and pulse power electronic system. The results of laboratory tests for the prototype model of the GaP-based switch were presented and compared with the PCSS switch parameters from the literature. The operating principle, parameters and application of IGBT transistor, thyristor, opto-thyristor, spark gap and power switch were presented and discussed. An analysis of the possibilities of replacing selected elements by the PCSS switch was carried out, taking into account the pros and cons of the compared devices. The possibility of using the currently made PCSS switch from gallium phosphide was also discussed.
    Źródło:
    Opto-Electronics Review; 2020, 28, 2; 74--81
    1230-3402
    Pojawia się w:
    Opto-Electronics Review
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Comparison of photoconductive semiconductor switch parameters with selected switch devices in power systems
    Autorzy:
    Piwowarski, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/1818254.pdf
    Data publikacji:
    2020
    Wydawca:
    Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
    Tematy:
    electronic devices
    electric switch
    photoconductive semiconductor switches
    gallium phosphide
    Opis:
    Currently, work is underway to manufacture and find potential applications for a photoconductive semiconductor switch made of a semi-insulating material. The article analyzes the literature in terms of parameters and possibilities of using PCSS switches, as well as currently used switches in power and pulse power electronic system. The results of laboratory tests for the prototype model of the GaP-based switch were presented and compared with the PCSS switch parameters from the literature. The operating principle, parameters and application of IGBT transistor, thyristor, opto-thyristor, spark gap and power switch were presented and discussed. An analysis of the possibilities of replacing selected elements by the PCSS switch was carried out, taking into account the pros and cons of the compared devices. The possibility of using the currently made PCSS switch from gallium phosphide was also discussed.
    Źródło:
    Opto-Electronics Review; 2020, 28, 2; 74--81
    1230-3402
    Pojawia się w:
    Opto-Electronics Review
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Photodiode based on the epitaxial phosphide gallium with increased sensitivity at a wavelength of 254 nm
    Fotodioda oparta na epitaksjalnym fosforku galu o zwiększonej wrażliwości przy długości fali 254 nm
    Autorzy:
    Dobrovolsky, Yurii G.
    Lipka, Volodymyr M.
    Strebezhev, Volodymyr V.
    Sorokatyi, Yurii O.
    Sorokatyi, Mykola O.
    Andreeva, Olga P.
    Powiązania:
    https://bibliotekanauki.pl/articles/408832.pdf
    Data publikacji:
    2020
    Wydawca:
    Politechnika Lubelska. Wydawnictwo Politechniki Lubelskiej
    Tematy:
    photodiode
    gallium phosphide
    sensitive, 254 nm
    Schottky barrier
    fotodioda
    fosforek galu
    czułość, 254 nm
    bariera Schottky'ego
    Opis:
    The paper showsthe results of the development of a photodiode technology based on gallium phosphide structure n+-n-GaP-Au with high sensitivity. It provides the ion etching of the surface of the gallium phosphide before an application of a leading electrodeof gold. The barrier layerof a 20 nm thick gold is applied to thesubstrate in the magnetic field of GaP. When forming the contact with the reverse sideof the indium substrate at 600°C, there occurs the annealing of the gold barrier layer. At the maximum of the spectral characteristics obtained by the photodiode, it has a sensitivity of 0.13A/W, and at a wavelength of 254 nm – about 0.06 A/W. The dynamic range of the photodiode is not less than 107.
    Artykuł pokazuje rezultaty rozwoju technologicznegofotodiody opartej na fosforku galu o strukturze n+-n-GaP-Auo wysokiej czułości. Umożliwia to wytrawianie jonowe powierzchni fosforku galu, zanim zastosowana zostanie elektroda przewodząca wykonana ze złota. Złota warstwa barierowa o grubości 20 nm jest nakładana na podłoże GaP w polu magnetycznym. Gdy powstaje stykz tyłu podłoża indowego w temperaturze 600°C, złota warstwa barierowa jest wyżarzana. Przy maksymalnej charakterystyce spektralnej uzyskanej przezfotodiodę, ma ona czułość 0,13 A/W, a przy długości fali 254 nm –około 0,06 A / W. Zakres dynamiczny fotodiody wynosi co najmniej 107.
    Źródło:
    Informatyka, Automatyka, Pomiary w Gospodarce i Ochronie Środowiska; 2020, 10, 1; 36-39
    2083-0157
    2391-6761
    Pojawia się w:
    Informatyka, Automatyka, Pomiary w Gospodarce i Ochronie Środowiska
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-6 z 6

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