- Tytuł:
- Two-dimensional modeling of surface photovoltage in metal/insulator/n-GaN structure with cylindrical symmetry
- Autorzy:
-
Matys, M
Powroznik, P
Kupka, D
Adamowicz, B - Powiązania:
- https://bibliotekanauki.pl/articles/174326.pdf
- Data publikacji:
- 2013
- Wydawca:
- Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
- Tematy:
-
surface photovoltage
gallium nitride
metal-insulator-semiconductor (MIS) structure
interface states
photodetector - Opis:
- The rigorous numerical analysis of the surface photovoltage (SPV) versus excitation UV-light intensity (Φ), from 104 to 1020 photon/(cm2s) in a metal/insulator/n-GaN structure with a negative gate voltage (VG = –2 V) was performed using a finite element method. In the simulations we assumed a continuous U-shape density distribution function Dit(E) of the interface states and n-type doping concentration ND = 1016 cm–3. The SPV signal was calculated and compared in three different characteristic regions at the interface, namely i) under the gate centre, ii) near the gate edge and iii) between the gate and ohmic contact. We attributed the differences in SPV(Φ) dependences to the influence of the interface states in terms of the initial band bending and interface recombination controlled by the gate bias. The obtained results are useful for the design of GaN-based UV-radiation photodetectors.
- Źródło:
-
Optica Applicata; 2013, 43, 1; 47-52
0078-5466
1899-7015 - Pojawia się w:
- Optica Applicata
- Dostawca treści:
- Biblioteka Nauki
Artykuł